Condition Dependences of Extended Defect Formation in 4H-SiC by Ion-Implantation/Activation-Anneal Process

Masahiro Nagano; Hidekazu Tsuchida; Takuma Suzuki; Tetsuo Hatakeyama; Junji Senzaki; Kenji Fukuda

doi:10.4028/www.scientific.net/MSF.645-648.323

Paper Titles

Optical and Structural Properties of In-Grown Stacking Faults in 4H-SiC Epilayers
p.307

Structural Analysis of Dislocations in Highly Nitrogen-Doped 4H-SiC Substrates
p.311

Structure of Inclusions in 4° Offcut 4H-SiC Epitaxy
p.315

Time Sequential Evolutions of Optically-Induced Single Shockley Stacking Faults Formed in 4H-SiC Epitaxial Layers
p.319

Condition Dependences of Extended Defect Formation in 4H-SiC by Ion-Implantation/Activation-Anneal Process
p.323

Single Shockley Stacking Faults in As-Grown 4H-SiC Epilayers
p.327

Influence of Shockley Stacking Fault Generation on Electrical Behavior of 4H-SiC 10 kV MPS Diodes
p.331

Dislocation Activity in 4H-SiC in the Brittle Domain
p.335

Correlation between Leakage Current and Stacking Fault Density of p-n Diodes Fabricated on 3C-SiC
p.339

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Condition Dependences of Extended Defect Formation...

Condition Dependences of Extended Defect Formation in 4H-SiC by Ion-Implantation/Activation-Anneal Process

Abstract:

Condition dependences of defect formation in 4H-SiC epilayer induced by the implantation/annealing process were investigated using synchrotron reflection X-ray topography and transmission electron microscopy. Nitrogen, phosphorus or aluminum ions were implanted in the 4H-SiC epilayers and then activation annealing was performed. To compare the implantation/annealing process, a sample receiving only the annealing treatment without the implantation was also performed. Two different crucibles (conventional and improved) were used in the annealing process. The formation of single layer Shockley-type stacking faults near the surface was found to have no ion-implantation condition or crucible dependence. The formation of BPD half-loops and the glide of pre-existing BPDs showed clear dependence on the crucibles.

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Materials Science Forum (Volumes 645-648)

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323-326

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https://doi.org/10.4028/www.scientific.net/MSF.645-648.323

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April 2010

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Masahiro Nagano, Hidekazu Tsuchida, Takuma Suzuki, Tetsuo Hatakeyama, Junji Senzaki, Kenji Fukuda

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Device Process

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