Correlation between Leakage Current and Stacking Fault Density of p-n Diodes Fabricated on 3C-SiC

Takamitsu Kawahara; Naoki Hatta; Kuniaki Yagi; Hidetsugu Uchida; Motoki Kobayashi; Masayuki Abe; Hiroyuki Nagasawa; Bernd Zippelius; Gerhard Pensl

doi:10.4028/www.scientific.net/MSF.645-648.339

Paper Titles

Condition Dependences of Extended Defect Formation in 4H-SiC by Ion-Implantation/Activation-Anneal Process
p.323

Single Shockley Stacking Faults in As-Grown 4H-SiC Epilayers
p.327

Influence of Shockley Stacking Fault Generation on Electrical Behavior of 4H-SiC 10 kV MPS Diodes
p.331

Dislocation Activity in 4H-SiC in the Brittle Domain
p.335

Correlation between Leakage Current and Stacking Fault Density of p-n Diodes Fabricated on 3C-SiC
p.339

Temperature-Dependence of the Leakage Current of 3C-SiC p⁺-n Diodes Caused by Extended Defects
p.343

6H-Type Zigzag Faults in Low-Doped 4H-SiC Epitaxial Layers
p.347

Characterization of Surface Defects of Highly N-Doped 4H-SiC Substrates that Produce Dislocations in the Epitaxial Layer
p.351

Room-Temperature Photoluminescence Observation of Stacking Faults in 3C-SiC
p.355

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Correlation between Leakage Current and Stacking Fault Density of p-n Diodes Fabricated on 3C-SiC

Abstract:

The correlation between leakage current and stacking fault (SF) density in p-n diodes fabricated on 3C-SiC homo-epitaxial layer is investigated. The leakage current density at reverse bias strongly depends on the SF density; an increase of one order of magnitude in the SF density enhances the leakage current by five orders of magnitude at a reverse bias of 400 V. In order to obtain commercially suitable MOSFETs with 10-4Acm-2 at 600V, the SF density has to be reduced below 6×104 cm-2. Photoemission caused by hot electrons, which travel along a leakage path, can be observed at the crossing between a SF and the edge of p-well region; where the maximum electric field is induced. The mechanism of the leakage current is discussed in detail in a separate paper.