Correlation between Leakage Current and Stacking Fault Density of p-n Diodes Fabricated on 3C-SiC
The correlation between leakage current and stacking fault (SF) density in p-n diodes fabricated on 3C-SiC homo-epitaxial layer is investigated. The leakage current density at reverse bias strongly depends on the SF density; an increase of one order of magnitude in the SF density enhances the leakage current by five orders of magnitude at a reverse bias of 400 V. In order to obtain commercially suitable MOSFETs with 10-4Acm-2 at 600V, the SF density has to be reduced below 6×104 cm-2. Photoemission caused by hot electrons, which travel along a leakage path, can be observed at the crossing between a SF and the edge of p-well region; where the maximum electric field is induced. The mechanism of the leakage current is discussed in detail in a separate paper.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
T. Kawahara et al., "Correlation between Leakage Current and Stacking Fault Density of p-n Diodes Fabricated on 3C-SiC", Materials Science Forum, Vols. 645-648, pp. 339-342, 2010