Characterization of Surface Defects of Highly N-Doped 4H-SiC Substrates that Produce Dislocations in the Epitaxial Layer

Yukari Ishikawa; Yoshihiro Sugawara; Hiroaki Saitoh; Katsunori Danno; Yoichiro Kawai; Noriyoshi Shibata; Tsukasa Hirayama; Yuichi Ikuhara

doi:10.4028/www.scientific.net/MSF.645-648.351

Paper Titles

Dislocation Activity in 4H-SiC in the Brittle Domain
p.335

Correlation between Leakage Current and Stacking Fault Density of p-n Diodes Fabricated on 3C-SiC
p.339

Temperature-Dependence of the Leakage Current of 3C-SiC p⁺-n Diodes Caused by Extended Defects
p.343

6H-Type Zigzag Faults in Low-Doped 4H-SiC Epitaxial Layers
p.347

Characterization of Surface Defects of Highly N-Doped 4H-SiC Substrates that Produce Dislocations in the Epitaxial Layer
p.351

Room-Temperature Photoluminescence Observation of Stacking Faults in 3C-SiC
p.355

Raman Investigation of Different Polytypes in SiC Thin Films Grown by Solid-Gas Phase Epitaxy on Si (111) and 6H-SiC Substrates
p.359

Stacking Faults around the Hetero-Interface Induced by 6H-SiC Polytype Transformation on 3C-SiC with Solution Growth
p.363

The Influence of the Temperature Gradient on the Defect Structure of 3C-SiC Grown Heteroepitaxially on 6H-SiC by Sublimation Epitaxy
p.367

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Characterization of Surface Defects of Highly...

Characterization of Surface Defects of Highly N-Doped 4H-SiC Substrates that Produce Dislocations in the Epitaxial Layer

Abstract:

The structures of defects that form different types of etch pits on highly N-doped 4H-SiC substrates, that were produced by a sublimation method, after molten KOH etching were characterized. It was found that most of the dislocations in the epitaxial layer originated from defects at the surface of substrate whose etch pit structures were clearly different from the conventional structures. The etch pits were classified into drop, oval, round and caterpillar pits. The drop and oval pits were concluded to be formed by the deformation of conventional etch pits. Round pits were concluded to originate from half loop dislocations and were transformed to complex dislocations by epitaxial growth. Analysis by transmission electron microscopy measurement indicates that slipped edge dislocations (or screw dislocations) on the basal plane form caterpillar pits.

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Materials Science Forum (Volumes 645-648)

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351-354

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.351

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Online since:

April 2010

Authors:

Yukari Ishikawa, Yoshihiro Sugawara, Hiroaki Saitoh, Katsunori Danno, Yoichiro Kawai, Noriyoshi Shibata, Tsukasa Hirayama, Yuichi Ikuhara

Keywords:

Caterpillar Pit, Etching, TEM

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References

[1] S. Ha, W.M. Vetter, M. Dudley, and M. Skowronski: Mater. Sci. Forum Vol. 389-393 (2002), p.443.

Google Scholar

[2] Y. Gao, Z. Zhang, R. Bondokov, S. Soloviev, and T. Sudarshan: Mater. Res. Soc. Symp. Proc. Vol. 815 (2004), J5. 20.

Google Scholar

[3] S.A. Sakwe, R . Müller, P.J. Wellmann: J. Cryst. Growth Vol. 289 (2006), p.520.

Google Scholar

[4] D. Siche, D. Klimm, T. Hölzel, A. Wohlfart: J. Cryst. Growth Vol. 270 (2004), p.1.

Google Scholar

[5] M. Katsuno, N. Ohtani, J. Takahashi, H. Yashiro and M. Kanaya: Jpn. J. Appl. Phys. Vol. 38 (1999), p.4661.

Google Scholar

[6] J. Takahashi, M. Kanaya and Y. Fujiwara: J. Cryst. Growth Vol. 135 (1994), p.61.

Google Scholar

[7] T. Ohno, H. Yamaguchi, S. Kuroda, K. Kojima, T. Suzuki and K. Arai: J. Cryst. Growth Vol. 271 (2004), p.1.

Google Scholar

[8] S. Ha, P. Mieszkowski, M. Skowronski, and L.B. Rowland: J. Cryst. Growth Vol. 244 (2002).

Google Scholar

[11] -20] (0001) Cross-section Plane.

Google Scholar

[11] -20].

Google Scholar

[11] -20].

Google Scholar