Characterization of Surface Defects of Highly N-Doped 4H-SiC Substrates that Produce Dislocations in the Epitaxial Layer

Abstract:

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The structures of defects that form different types of etch pits on highly N-doped 4H-SiC substrates, that were produced by a sublimation method, after molten KOH etching were characterized. It was found that most of the dislocations in the epitaxial layer originated from defects at the surface of substrate whose etch pit structures were clearly different from the conventional structures. The etch pits were classified into drop, oval, round and caterpillar pits. The drop and oval pits were concluded to be formed by the deformation of conventional etch pits. Round pits were concluded to originate from half loop dislocations and were transformed to complex dislocations by epitaxial growth. Analysis by transmission electron microscopy measurement indicates that slipped edge dislocations (or screw dislocations) on the basal plane form caterpillar pits.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

351-354

DOI:

10.4028/www.scientific.net/MSF.645-648.351

Citation:

Y. Ishikawa et al., "Characterization of Surface Defects of Highly N-Doped 4H-SiC Substrates that Produce Dislocations in the Epitaxial Layer", Materials Science Forum, Vols. 645-648, pp. 351-354, 2010

Online since:

April 2010

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$35.00

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