The Influence of the Temperature Gradient on the Defect Structure of 3C-SiC Grown Heteroepitaxially on 6H-SiC by Sublimation Epitaxy

Maya Marinova; Alkyoni Mantzari; Milena Beshkova; Mikael Syväjärvi; Rositza Yakimova; Efstathios K. Polychroniadis

doi:10.4028/www.scientific.net/MSF.645-648.367

Paper Titles

Characterization of Surface Defects of Highly N-Doped 4H-SiC Substrates that Produce Dislocations in the Epitaxial Layer
p.351

Room-Temperature Photoluminescence Observation of Stacking Faults in 3C-SiC
p.355

Raman Investigation of Different Polytypes in SiC Thin Films Grown by Solid-Gas Phase Epitaxy on Si (111) and 6H-SiC Substrates
p.359

Stacking Faults around the Hetero-Interface Induced by 6H-SiC Polytype Transformation on 3C-SiC with Solution Growth
p.363

The Influence of the Temperature Gradient on the Defect Structure of 3C-SiC Grown Heteroepitaxially on 6H-SiC by Sublimation Epitaxy
p.367

A Study of Structural Defects in 3C-SiC Hetero-Epitaxial Films
p.371

Macrodefects in Cubic Silicon Carbide Crystals
p.375

Microstructural Characterization of Epitaxial Cubic Silicon Carbide Using Transmission Electron Microscopy
p.379

TEM and LTPL Investigations of 3C-SiC Layers Grown by LPE on (100) and (111) 3C-SiC Seeds
p.383

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648The Influence of the Temperature Gradient on the...

The Influence of the Temperature Gradient on the Defect Structure of 3C-SiC Grown Heteroepitaxially on 6H-SiC by Sublimation Epitaxy

Abstract:

In the present work the structural quality of 3C-SiC layers grown by sublimation epitaxy is studied by means of conventional and high resolution transmission electron microscopy. The layers were grown on Si-face 6H-SiC nominally on-axis substrates at a temperature of 2000°C and different temperature gradients, ranging from 5 to 8 °C /mm. The influence of the temperature gradient on the structural quality of the layers is discussed. The formation of specific twin complexes and conditions for lower stacking fault density are investigated.

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Materials Science Forum (Volumes 645-648)

Pages:

367-370

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.367

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Online since:

April 2010

Authors:

Maya Marinova, Alkyoni Mantzari, Milena Beshkova, Mikael Syväjärvi, Rositza Yakimova, Efstathios K. Polychroniadis

Keywords:

Epitaxial Growth, Stacking Fault, TEM

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References

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