The Influence of the Temperature Gradient on the Defect Structure of 3C-SiC Grown Heteroepitaxially on 6H-SiC by Sublimation Epitaxy
In the present work the structural quality of 3C-SiC layers grown by sublimation epitaxy is studied by means of conventional and high resolution transmission electron microscopy. The layers were grown on Si-face 6H-SiC nominally on-axis substrates at a temperature of 2000°C and different temperature gradients, ranging from 5 to 8 °C /mm. The influence of the temperature gradient on the structural quality of the layers is discussed. The formation of specific twin complexes and conditions for lower stacking fault density are investigated.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
M. Marinova et al., "The Influence of the Temperature Gradient on the Defect Structure of 3C-SiC Grown Heteroepitaxially on 6H-SiC by Sublimation Epitaxy", Materials Science Forum, Vols. 645-648, pp. 367-370, 2010