Microstructural Characterization of Epitaxial Cubic Silicon Carbide Using Transmission Electron Microscopy

Bralee Chayasombat; Y. Kimata; T. Kato; Tomoharu Tokunaga; Katsuhiro Sasaki; Kotaro Kuroda

doi:10.4028/www.scientific.net/MSF.645-648.379

Paper Titles

Stacking Faults around the Hetero-Interface Induced by 6H-SiC Polytype Transformation on 3C-SiC with Solution Growth
p.363

The Influence of the Temperature Gradient on the Defect Structure of 3C-SiC Grown Heteroepitaxially on 6H-SiC by Sublimation Epitaxy
p.367

A Study of Structural Defects in 3C-SiC Hetero-Epitaxial Films
p.371

Macrodefects in Cubic Silicon Carbide Crystals
p.375

Microstructural Characterization of Epitaxial Cubic Silicon Carbide Using Transmission Electron Microscopy
p.379

TEM and LTPL Investigations of 3C-SiC Layers Grown by LPE on (100) and (111) 3C-SiC Seeds
p.383

TEM and SEM-CL Studies of SiC Nanowires
p.387

Characteristics of Porous 3C-SiC Thin Films Formed with Nitrogen Doping Concentrations
p.391

Theory of Neutral Divacancy in SiC: A Defect for Spintronics
p.395

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Microstructural Characterization of Epitaxial...

Microstructural Characterization of Epitaxial Cubic Silicon Carbide Using Transmission Electron Microscopy

Abstract:

Microstructures of switch-back epitaxy cubic silicon carbide (3C-SiC) before and after Al ion implantation were investigated by transmission electron microscopy (TEM). Stacking faults aligned along the {111} were observed in 3C-SiC. A surface bulge was observed in some regions and planar defects were observed under the bulge region. After ion implantation of 3C-SiC, defects were observed to be distributed up to a depth approximately 500 nm from the surface.

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Silicon Carbide and Related Materials 2009

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Materials Science Forum (Volumes 645-648)

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379-382

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.379

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Online since:

April 2010

Authors:

Bralee Chayasombat, Y. Kimata, T. Kato, Tomoharu Tokunaga, Katsuhiro Sasaki, Kotaro Kuroda

Keywords:

Ion Implantation, Stacking Fault, TEM

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