Microstructural Characterization of Epitaxial Cubic Silicon Carbide Using Transmission Electron Microscopy

Abstract:

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Microstructures of switch-back epitaxy cubic silicon carbide (3C-SiC) before and after Al ion implantation were investigated by transmission electron microscopy (TEM). Stacking faults aligned along the {111} were observed in 3C-SiC. A surface bulge was observed in some regions and planar defects were observed under the bulge region. After ion implantation of 3C-SiC, defects were observed to be distributed up to a depth approximately 500 nm from the surface.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

379-382

DOI:

10.4028/www.scientific.net/MSF.645-648.379

Citation:

B. Chayasombat et al., "Microstructural Characterization of Epitaxial Cubic Silicon Carbide Using Transmission Electron Microscopy", Materials Science Forum, Vols. 645-648, pp. 379-382, 2010

Online since:

April 2010

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Price:

$35.00

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