Stacking Faults around the Hetero-Interface Induced by 6H-SiC Polytype Transformation on 3C-SiC with Solution Growth

Abstract:

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6H-SiC hetero-epitaxially grown on a (111) 3C-SiC was observed with TEM. High-density stacking faults were formed around the hetero-interface, and the density of stacking faults decreased with increasing distance from interface. On the other hand, when 3C-SiC was homo-epitaxially grown on a 3C-SiC, any stacking faults did not exist at the interface between the grown crystal and the seed crystal. Thus, the stacking faults formation started from the 6H/3C hetero-interface. Considering the lattice-mismatch strain between 3C-SiC and 6H-SiC, the strain energy is equivalent to the stacking fault energy of 6H-SiC. This similarity suggests that the stacking faults formation could be caused by the relaxation of the lattice-mismatch strain.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

363-366

DOI:

10.4028/www.scientific.net/MSF.645-648.363

Citation:

K. Seki et al., "Stacking Faults around the Hetero-Interface Induced by 6H-SiC Polytype Transformation on 3C-SiC with Solution Growth", Materials Science Forum, Vols. 645-648, pp. 363-366, 2010

Online since:

April 2010

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$35.00

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