Room-Temperature Photoluminescence Observation of Stacking Faults in 3C-SiC

Rii Hirano; Michio Tajima; Kohei M. Itoh

doi:10.4028/www.scientific.net/MSF.645-648.355

Paper Titles

Correlation between Leakage Current and Stacking Fault Density of p-n Diodes Fabricated on 3C-SiC
p.339

Temperature-Dependence of the Leakage Current of 3C-SiC p⁺-n Diodes Caused by Extended Defects
p.343

6H-Type Zigzag Faults in Low-Doped 4H-SiC Epitaxial Layers
p.347

Characterization of Surface Defects of Highly N-Doped 4H-SiC Substrates that Produce Dislocations in the Epitaxial Layer
p.351

Room-Temperature Photoluminescence Observation of Stacking Faults in 3C-SiC
p.355

Raman Investigation of Different Polytypes in SiC Thin Films Grown by Solid-Gas Phase Epitaxy on Si (111) and 6H-SiC Substrates
p.359

Stacking Faults around the Hetero-Interface Induced by 6H-SiC Polytype Transformation on 3C-SiC with Solution Growth
p.363

The Influence of the Temperature Gradient on the Defect Structure of 3C-SiC Grown Heteroepitaxially on 6H-SiC by Sublimation Epitaxy
p.367

A Study of Structural Defects in 3C-SiC Hetero-Epitaxial Films
p.371

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Room-Temperature Photoluminescence Observation of...

Room-Temperature Photoluminescence Observation of Stacking Faults in 3C-SiC

Abstract:

We investigated the optical properties of stacking faults (SFs) in cubic silicon carbide by photoluminescence (PL) spectroscopy and mapping. The room-temperature PL spectra consisted of a 2.3 eV peak due to nitrogen and two undefined broad peaks at 1.7 eV and 0.95 eV. On the PL intensity mapping for the 2.3 eV peak, SFs appeared as dark lines. SFs which expose carbon atoms (SFC) and silicon atoms (SFSi) on the surface appeared as bright lines and dark lines, respectively, in PL mapping for the 1.7 eV and 0.95 eV peaks. We believe the two undefined peaks are associated with SFC. This technique allows us to detect SFs nondestructively and to distinguish between SFC and SFSi. We further suggest the presence of inhomogeneous stress around SFCs based on the broadening of the 2.3 eV peak.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2009

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Pages:

355-358

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.355

Citation:

Cite this paper

Online since:

April 2010

Authors:

Rii Hirano, Michio Tajima, Kohei M. Itoh

Keywords:

Epitaxial Growth, Photoluminescence (PL), Stacking Fault

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] W. E. Nelson, F. A. Halden, and A. Rosengreen, J. Appl. Phys. Vol. 37 (1966), p.333.

Google Scholar

[2] K. K. Ferry, Phys. Rev. B Vol. 12 (1975), p.2361.

Google Scholar

[3] H. Nagasawa, K, Yagi, T. Kawahara, N. Hatta, and M. Abe Microelectron. Eng. Vol. 83 (2006), p.185.

Google Scholar

[4] K. Yagi, T. Kawahara, N. Hatta, and H. Nagasawa, Mater. Sci. Forum Vol. 527-529 (2006), p.291.

Google Scholar

[5] H. Nagasawa, T. Kawahara, and K. Yagi, Matr. Sci. Forum Vol. 389-393 (2002), p.319.

Google Scholar

[6] W. J. Choyke, H. Matsunami, and G. Pensl (Eds. ): Silicon Carbide (Springer, Berlin 2004).

Google Scholar

[7] H. Nagasawa, K. Yagi, and T. Kawahara, J. Cryst. Growth Vol. 237-239 (2002), p.1244.

Google Scholar

[8] H. Nagasawa, M. Abe, K. Yagi, T. Kawahara, and N. Hatta, Phys. Stat. Sol. (b) Vol. 245, No 7, (2008), p.1272.

Google Scholar

[9] M. Tajima, M. Tanaka, and N. Hoshino: Mater. Sci. Forum Vol. 389-393 (2002), p.597.

Google Scholar

[10] M. Tajima, E. Higashi, T. Hayashi, H. Kinoshita, and H. Shiomi: Mater. Sci. Forum Vol. 527-529 (2006) p.711.

DOI: 10.4028/www.scientific.net/msf.527-529.711

Google Scholar

[11] W. J. Choyke, Z. C. Feng, and J. A. Powell, J. Appl. Phys. Vol 64 (1988), p.3163.

Google Scholar