Macrodefects in Cubic Silicon Carbide Crystals

Valdas Jokubavicius; Justinas Palisaitis; Remigijus Vasiliauskas; Rositza Yakimova; Mikael Syväjärvi

doi:10.4028/www.scientific.net/MSF.645-648.375

Paper Titles

Raman Investigation of Different Polytypes in SiC Thin Films Grown by Solid-Gas Phase Epitaxy on Si (111) and 6H-SiC Substrates
p.359

Stacking Faults around the Hetero-Interface Induced by 6H-SiC Polytype Transformation on 3C-SiC with Solution Growth
p.363

The Influence of the Temperature Gradient on the Defect Structure of 3C-SiC Grown Heteroepitaxially on 6H-SiC by Sublimation Epitaxy
p.367

A Study of Structural Defects in 3C-SiC Hetero-Epitaxial Films
p.371

Macrodefects in Cubic Silicon Carbide Crystals
p.375

Microstructural Characterization of Epitaxial Cubic Silicon Carbide Using Transmission Electron Microscopy
p.379

TEM and LTPL Investigations of 3C-SiC Layers Grown by LPE on (100) and (111) 3C-SiC Seeds
p.383

TEM and SEM-CL Studies of SiC Nanowires
p.387

Characteristics of Porous 3C-SiC Thin Films Formed with Nitrogen Doping Concentrations
p.391

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Macrodefects in Cubic Silicon Carbide Crystals

Macrodefects in Cubic Silicon Carbide Crystals

Abstract:

Different sublimation growth conditions of 3C-SiC approaching a bulk process have been investigated with the focus on appearance of macrodefects. The growth rate of 3C-SiC crystals grown on 6H-SiC varied from 380 to 460 μm/h with the thickness of the crystals from 190 to 230 μm, respectively. The formation of macrodefects with void character was revealed at the early stage of 3C-SiC crystal growth. The highest concentration of macrodefects appears in the vicinity of the domain in samples grown under high temperature gradient and fastest temperature ramp up. The formation of macrodefects was related to carbon deficiency which appear due to high Si/C ratio which is used to enable formation of the 3C-SiC polytype.

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Materials Science Forum (Volumes 645-648)

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375-378

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.375

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Online since:

April 2010

Authors:

Valdas Jokubavicius, Justinas Palisaitis, Remigijus Vasiliauskas, Rositza Yakimova, Mikael Syväjärvi

Keywords:

Epitaxial Growth, Macrodefects

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