Macrodefects in Cubic Silicon Carbide Crystals

Abstract:

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Different sublimation growth conditions of 3C-SiC approaching a bulk process have been investigated with the focus on appearance of macrodefects. The growth rate of 3C-SiC crystals grown on 6H-SiC varied from 380 to 460 μm/h with the thickness of the crystals from 190 to 230 μm, respectively. The formation of macrodefects with void character was revealed at the early stage of 3C-SiC crystal growth. The highest concentration of macrodefects appears in the vicinity of the domain in samples grown under high temperature gradient and fastest temperature ramp up. The formation of macrodefects was related to carbon deficiency which appear due to high Si/C ratio which is used to enable formation of the 3C-SiC polytype.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

375-378

DOI:

10.4028/www.scientific.net/MSF.645-648.375

Citation:

V. Jokubavicius et al., "Macrodefects in Cubic Silicon Carbide Crystals", Materials Science Forum, Vols. 645-648, pp. 375-378, 2010

Online since:

April 2010

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Price:

$35.00

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