TEM and LTPL Investigations of 3C-SiC Layers Grown by LPE on (100) and (111) 3C-SiC Seeds

Abstract:

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In the present work the defects appearing in layers grown by liquid phase epitaxy on different substrates are compared. The used seeds were (i) 3C-SiC with (111) orientation, grown heteroepitaxially on (0001) 4H-SiC or 6H-SiC substrates by continuous feed physical vapour transport process and the vapour-liquid-solid mechanism, respectively, and (ii) 3C-SiC wafer with (100) orientation from HOYA. The structural and optical investigation showed that (i) on the (111) substrates, due to the appearance of silicon and 6H-SiC inclusions, a layer which consisted of a sequence of long period polytypes was formed. The dominant polytype formed was 21R-SiC, which after successive transformation to 39R- and 57R- SiC led to the formation of 6H-SiC on the top of the layer. (ii) On the (100) substrates, a 3C-SiC layer with comparatively uniform defect density was formed. The main defects were stacking faults and their density was reducing during the process.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

383-386

DOI:

10.4028/www.scientific.net/MSF.645-648.383

Citation:

M. Marinova et al., "TEM and LTPL Investigations of 3C-SiC Layers Grown by LPE on (100) and (111) 3C-SiC Seeds", Materials Science Forum, Vols. 645-648, pp. 383-386, 2010

Online since:

April 2010

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$35.00

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