TEM and LTPL Investigations of 3C-SiC Layers Grown by LPE on (100) and (111) 3C-SiC Seeds
In the present work the defects appearing in layers grown by liquid phase epitaxy on different substrates are compared. The used seeds were (i) 3C-SiC with (111) orientation, grown heteroepitaxially on (0001) 4H-SiC or 6H-SiC substrates by continuous feed physical vapour transport process and the vapour-liquid-solid mechanism, respectively, and (ii) 3C-SiC wafer with (100) orientation from HOYA. The structural and optical investigation showed that (i) on the (111) substrates, due to the appearance of silicon and 6H-SiC inclusions, a layer which consisted of a sequence of long period polytypes was formed. The dominant polytype formed was 21R-SiC, which after successive transformation to 39R- and 57R- SiC led to the formation of 6H-SiC on the top of the layer. (ii) On the (100) substrates, a 3C-SiC layer with comparatively uniform defect density was formed. The main defects were stacking faults and their density was reducing during the process.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
M. Marinova et al., "TEM and LTPL Investigations of 3C-SiC Layers Grown by LPE on (100) and (111) 3C-SiC Seeds", Materials Science Forum, Vols. 645-648, pp. 383-386, 2010