TEM and LTPL Investigations of 3C-SiC Layers Grown by LPE on (100) and (111) 3C-SiC Seeds

Maya Marinova; Georgios Zoulis; Teddy Robert; Frédéric Mercier; Alkyoni Mantzari; Irina G. Galben-Sandulache; Olivier Kim-Hak; Jean Lorenzzi; Sandrine Juillaguet; Didier Chaussende; Gabriel Ferro; Jean Camassel; Efstathios K. Polychroniadis

doi:10.4028/www.scientific.net/MSF.645-648.383

Paper Titles

The Influence of the Temperature Gradient on the Defect Structure of 3C-SiC Grown Heteroepitaxially on 6H-SiC by Sublimation Epitaxy
p.367

A Study of Structural Defects in 3C-SiC Hetero-Epitaxial Films
p.371

Macrodefects in Cubic Silicon Carbide Crystals
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Microstructural Characterization of Epitaxial Cubic Silicon Carbide Using Transmission Electron Microscopy
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TEM and LTPL Investigations of 3C-SiC Layers Grown by LPE on (100) and (111) 3C-SiC Seeds
p.383

TEM and SEM-CL Studies of SiC Nanowires
p.387

Characteristics of Porous 3C-SiC Thin Films Formed with Nitrogen Doping Concentrations
p.391

Theory of Neutral Divacancy in SiC: A Defect for Spintronics
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The Carbon Vacancy Related EI4 Defect in 4H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 645-648TEM and LTPL Investigations of 3C-SiC Layers Grown...

TEM and LTPL Investigations of 3C-SiC Layers Grown by LPE on (100) and (111) 3C-SiC Seeds

Abstract:

In the present work the defects appearing in layers grown by liquid phase epitaxy on different substrates are compared. The used seeds were (i) 3C-SiC with (111) orientation, grown heteroepitaxially on (0001) 4H-SiC or 6H-SiC substrates by continuous feed physical vapour transport process and the vapour-liquid-solid mechanism, respectively, and (ii) 3C-SiC wafer with (100) orientation from HOYA. The structural and optical investigation showed that (i) on the (111) substrates, due to the appearance of silicon and 6H-SiC inclusions, a layer which consisted of a sequence of long period polytypes was formed. The dominant polytype formed was 21R-SiC, which after successive transformation to 39R- and 57R- SiC led to the formation of 6H-SiC on the top of the layer. (ii) On the (100) substrates, a 3C-SiC layer with comparatively uniform defect density was formed. The main defects were stacking faults and their density was reducing during the process.

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Periodical:

Materials Science Forum (Volumes 645-648)

Pages:

383-386

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.383

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Online since:

April 2010

Authors:

Maya Marinova, Georgios Zoulis, Teddy Robert, Frédéric Mercier, Alkyoni Mantzari, Irina G. Galben-Sandulache, Olivier Kim-Hak, Jean Lorenzzi, Sandrine Juillaguet, Didier Chaussende, Gabriel Ferro, Jean Camassel, Efstathios K. Polychroniadis

Keywords:

Liquid Phase Epitaxy (LPE), Low Temperature Photoluminescence, TEM

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References

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