Influence of Shockley Stacking Fault Generation on Electrical Behavior of 4H-SiC 10 kV MPS Diodes

Qing Chun Jon Zhang; Anant K. Agarwal; Albert A. Burk; Michael  J. O'Loughlin; John W. Palmour; Robert E. Stahlbush; Charles Scozzie

doi:10.4028/www.scientific.net/MSF.645-648.331

Paper Titles

Structure of Inclusions in 4° Offcut 4H-SiC Epitaxy
p.315

Time Sequential Evolutions of Optically-Induced Single Shockley Stacking Faults Formed in 4H-SiC Epitaxial Layers
p.319

Condition Dependences of Extended Defect Formation in 4H-SiC by Ion-Implantation/Activation-Anneal Process
p.323

Single Shockley Stacking Faults in As-Grown 4H-SiC Epilayers
p.327

Influence of Shockley Stacking Fault Generation on Electrical Behavior of 4H-SiC 10 kV MPS Diodes
p.331

Dislocation Activity in 4H-SiC in the Brittle Domain
p.335

Correlation between Leakage Current and Stacking Fault Density of p-n Diodes Fabricated on 3C-SiC
p.339

Temperature-Dependence of the Leakage Current of 3C-SiC p⁺-n Diodes Caused by Extended Defects
p.343

6H-Type Zigzag Faults in Low-Doped 4H-SiC Epitaxial Layers
p.347

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Influence of Shockley Stacking Fault Generation on Electrical Behavior of 4H-SiC 10 kV MPS Diodes

Abstract:

The influence of stacking fault (SF) generation on the reverse blocking characteristics has been investigated on SiC 10 kV, 5 A Merged PiN (MPS) diodes. For the first time, we have observed that the generation of SFs under forward biased stress increases the reverse leakage current. In addition, the presence of a secondary diode formed by the electrical stress was observed and attributed to the breakdown voltage failure on certain devices.