Influence of Shockley Stacking Fault Generation on Electrical Behavior of 4H-SiC 10 kV MPS Diodes

Abstract:

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The influence of stacking fault (SF) generation on the reverse blocking characteristics has been investigated on SiC 10 kV, 5 A Merged PiN (MPS) diodes. For the first time, we have observed that the generation of SFs under forward biased stress increases the reverse leakage current. In addition, the presence of a secondary diode formed by the electrical stress was observed and attributed to the breakdown voltage failure on certain devices.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

331-334

DOI:

10.4028/www.scientific.net/MSF.645-648.331

Citation:

Q. C. J. Zhang et al., "Influence of Shockley Stacking Fault Generation on Electrical Behavior of 4H-SiC 10 kV MPS Diodes", Materials Science Forum, Vols. 645-648, pp. 331-334, 2010

Online since:

April 2010

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$38.00

[1] R. E. Stahlbush, K. X. Liu, Q. Zhang, and J. J. Sumakeris, Mater. Sci. Forum Vols. 556-557 (2007), p.295.

[2] J. P. Bergman, H. Lendenmann, P. A. Nilsson, U. Lindefelt, and P. Skytt, Mater. Sci. Forum Vols. 353-356 (2001), p.299.

[3] S. G. Sridhara, F. H. C. Carlsson, J. P. Bergman, and E. Janzén, Appl. Phys. Lett. Vol. 79 (2001).

[1] [2] [3] [4] 0 5 10 15 20 VF (V) IF (A) Pre.

[15] min.

[60] min. (c) VR (V) IR (A) Pre.

[15] min.

[60] min. Fig. 7 UVPL images for MPS-3 before (a) and after.

[45] minutes stress (b). Arc (b) (a).

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