Consequences of NO Thermal Treatments in the Properties of Dielectric Films / SiC Structures
The consequences of thermal treatments in nitric oxide atmospheres on the characteristics of dielectric films / SiC structures was investigated by high-frequency capacitance-voltage measurements, X-ray photoelectron spectroscopy, and X-ray reflectometry techniques. It was observed that nitrogen incorporation in dielectric films / SiC structures leads to the formation of a thinner interfacial layer that contains carbon. This fact was related to the improvement of electrical properties of those structures.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
F. C. Stedile et al., "Consequences of NO Thermal Treatments in the Properties of Dielectric Films / SiC Structures", Materials Science Forum, Vols. 645-648, pp. 689-692, 2010