Consequences of NO Thermal Treatments in the Properties of Dielectric Films / SiC Structures

Abstract:

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The consequences of thermal treatments in nitric oxide atmospheres on the characteristics of dielectric films / SiC structures was investigated by high-frequency capacitance-voltage measurements, X-ray photoelectron spectroscopy, and X-ray reflectometry techniques. It was observed that nitrogen incorporation in dielectric films / SiC structures leads to the formation of a thinner interfacial layer that contains carbon. This fact was related to the improvement of electrical properties of those structures.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

689-692

DOI:

10.4028/www.scientific.net/MSF.645-648.689

Citation:

F. C. Stedile et al., "Consequences of NO Thermal Treatments in the Properties of Dielectric Films / SiC Structures", Materials Science Forum, Vols. 645-648, pp. 689-692, 2010

Online since:

April 2010

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Price:

$35.00

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