Consequences of NO Thermal Treatments in the Properties of Dielectric Films / SiC Structures

Fernanda Chiarello Stedile; Silma Alberton Corrêa; Cláudio Radtke; Leonardo Miotti; Israel J.R. Baumvol; Gabriel V. Soares; Fred Kong; Ji Sheng Han; Leonie Hold; Sima Dimitrijev

doi:10.4028/www.scientific.net/MSF.645-648.689

Paper Titles

Investigations on Surge Current Capability of SiC Schottky Diodes by Implementation of New Pad Metallizations
p.673

On the Viability of Au/3C-SiC Schottky Barrier Diodes
p.677

Comparison of the Threshold-Voltage Stability of SiC MOSFETs with Thermally Grown and Deposited Gate Oxides
p.681

Significant Improvement in Reliability of Thermal Oxide on 4H-SiC (0001) Face Using Ammonia Post-Oxidation Annealing
p.685

Consequences of NO Thermal Treatments in the Properties of Dielectric Films / SiC Structures
p.689

The Limits of Post Oxidation Annealing in NO
p.693

Electrical Activation of B⁺-Ions Implanted into 4H-SiC
p.697

Manganese in 4H-SiC
p.701

Effects of Implantation Temperature on Sheet and Contact Resistance of Heavily Al Implanted 4H-SiC
p.705

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Consequences of NO Thermal Treatments in the...

Consequences of NO Thermal Treatments in the Properties of Dielectric Films / SiC Structures

Abstract:

The consequences of thermal treatments in nitric oxide atmospheres on the characteristics of dielectric films / SiC structures was investigated by high-frequency capacitance-voltage measurements, X-ray photoelectron spectroscopy, and X-ray reflectometry techniques. It was observed that nitrogen incorporation in dielectric films / SiC structures leads to the formation of a thinner interfacial layer that contains carbon. This fact was related to the improvement of electrical properties of those structures.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2009

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Pages:

689-692

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.689

Citation:

Cite this paper

Online since:

April 2010

Authors:

Fernanda Chiarello Stedile, Silma Alberton Corrêa, Cláudio Radtke, Leonardo Miotti, Israel J.R. Baumvol, Gabriel V. Soares, Fred Kong, Ji Sheng Han, Leonie Hold, Sima Dimitrijev

Keywords:

C-V Characterization, Nitridation, X-Ray Photospectroscopy

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] V. V. Afanasev, M. Bassler, G. Pensl, and M. Schulz: Phys. Stat. Sol. (a) Vol. 162 (1997), p.321.

DOI: 10.1002/1521-396x(199707)162:1<321::aid-pssa321>3.0.co;2-f

Google Scholar

[2] S. A. Corrêa, C. Radtke, G. V. Soares, I. J. R. Baumvol, C. Krug, and F. C. Stedile: Electrochem. Solid-State Lett. Vol. 11 (2008), p. H258.

DOI: 10.1149/1.2949117

Google Scholar

[3] G. Y. Chung, C. C. Tin, J. R. Williams, K. McDonald, M. D. Di Ventra, S. T. Pantelides, L. C. Feldman, and R. A. Weller: Appl. Phys. Lett. Vol. 76 (2000), p.1713.

DOI: 10.1063/1.126167

Google Scholar

[4] H. -F. Li, S. Dimitrijev, H. B. Harrison, and D. Sweatman: Appl. Phys. Lett. Vol. 70 (1997), p. (2028).

Google Scholar

[5] P. Jamet and S. Dimitrijev: Appl. Phys. Lett. Vol. 79 (2001), p.323.

Google Scholar

[6] P. Jamet, S. Dimitrijev, and P. Tanner: J. Appl. Phys. Vol. 90 (2001), p.5058.

Google Scholar

[7] S. Dhar, L. C. Feldman, S. Wang, T. Isaacs-Smith, and J. R. Williams: J. Appl. Phys. Vol. 98 (2005), p.14902.

Google Scholar

[8] J. W. Chai, J. S. Pan, Z. Zhang, S. J. Wang, Q. Chen, and C. H. A. Huan: Appl. Phys. Lett. Vol. 92 (2008), p.92119.

Google Scholar

[9] B. Wei, B. Zhang, and K. E. Johnson: J. Appl. Phys. Vol. 83 (1998), p.2491.

Google Scholar

[10] S. A. Corrêa, C. Radtke, G. V. Soares, L. Miotti, I. J. R. Baumvol, S. Dimitrijev, J. Han, L. Hold, F. Kong, and F. C. Stedile: Appl. Phys. Lett. Vol. 94 (2009), p.251909.

DOI: 10.1063/1.3159812

Google Scholar

[11] G. V. Soares, I. J. R. Baumvol, L. Hold, F. Kong, J. Han, S. Dimitrijev, C. Radtke, and F. C. Stedile: Appl. Phys. Lett. Vol. 91 (2007), p.41906.

DOI: 10.1063/1.2763966

Google Scholar