Electrical Activation of B+-Ions Implanted into 4H-SiC

Thanos Tsirimpis; M. Krieger; Heiko B. Weber; Gerhard Pensl

doi:10.4028/www.scientific.net/MSF.645-648.697

Paper Titles

Comparison of the Threshold-Voltage Stability of SiC MOSFETs with Thermally Grown and Deposited Gate Oxides
p.681

Significant Improvement in Reliability of Thermal Oxide on 4H-SiC (0001) Face Using Ammonia Post-Oxidation Annealing
p.685

Consequences of NO Thermal Treatments in the Properties of Dielectric Films / SiC Structures
p.689

The Limits of Post Oxidation Annealing in NO
p.693

Electrical Activation of B⁺-Ions Implanted into 4H-SiC
p.697

Manganese in 4H-SiC
p.701

Effects of Implantation Temperature on Sheet and Contact Resistance of Heavily Al Implanted 4H-SiC
p.705

Ultra Fast High Temperature Microwave Annealing of Ion Implanted Large Bandgap Semiconductors
p.709

Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC
p.713

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Electrical Activation of B+-Ions Implanted into...

Electrical Activation of B⁺-Ions Implanted into 4H-SiC

Abstract:

Boron (B) ions were implanted into 4H-SiC. In order to avoid the out-diffusion of B ions during the subsequent annealing process, two processing techniques were applied. Either a box-shaped B-profile was implanted, which was followed by a two-step annealing (900°C for 120 min + annealing temperature TA for 30 min), or a box-shaped B-profile was implanted together with two carbon (C) Gaussian profiles located on both edges of the B box-profile followed by a one-step annealing (TA for 30 min). The annealing temperature TA ranged from 1500°C to 1750°C. The electrically activated B acceptor concentration was measured by temperature-dependent Hall effect and the energy for the formation of the B acceptor was determined assuming a first order process.

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Materials Science Forum (Volumes 645-648)

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697-700

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https://doi.org/10.4028/www.scientific.net/MSF.645-648.697

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April 2010

Authors:

Thanos Tsirimpis, M. Krieger, Heiko B. Weber, Gerhard Pensl

Keywords:

Boron Acceptor, Electrical Activation, Hall Effect

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