Electrical Activation of B+-Ions Implanted into 4H-SiC

Abstract:

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Boron (B) ions were implanted into 4H-SiC. In order to avoid the out-diffusion of B ions during the subsequent annealing process, two processing techniques were applied. Either a box-shaped B-profile was implanted, which was followed by a two-step annealing (900°C for 120 min + annealing temperature TA for 30 min), or a box-shaped B-profile was implanted together with two carbon (C) Gaussian profiles located on both edges of the B box-profile followed by a one-step annealing (TA for 30 min). The annealing temperature TA ranged from 1500°C to 1750°C. The electrically activated B acceptor concentration was measured by temperature-dependent Hall effect and the energy for the formation of the B acceptor was determined assuming a first order process.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

697-700

DOI:

10.4028/www.scientific.net/MSF.645-648.697

Citation:

T. Tsirimpis et al., "Electrical Activation of B+-Ions Implanted into 4H-SiC", Materials Science Forum, Vols. 645-648, pp. 697-700, 2010

Online since:

April 2010

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Price:

$35.00

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