Manganese in 4H-SiC

Margareta K. Linnarsson; Aurégane Audren; Anders Hallén

doi:10.4028/www.scientific.net/MSF.645-648.701

Paper Titles

Significant Improvement in Reliability of Thermal Oxide on 4H-SiC (0001) Face Using Ammonia Post-Oxidation Annealing
p.685

Consequences of NO Thermal Treatments in the Properties of Dielectric Films / SiC Structures
p.689

The Limits of Post Oxidation Annealing in NO
p.693

Electrical Activation of B⁺-Ions Implanted into 4H-SiC
p.697

Manganese in 4H-SiC
p.701

Effects of Implantation Temperature on Sheet and Contact Resistance of Heavily Al Implanted 4H-SiC
p.705

Ultra Fast High Temperature Microwave Annealing of Ion Implanted Large Bandgap Semiconductors
p.709

Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC
p.713

Influence of Heating and Cooling Rates of Post-Implantation Annealing Process on Al-Implanted 4H-SiC Epitaxial Samples
p.717

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Manganese in 4H-SiC

Manganese in 4H-SiC

Abstract:

Manganese diffusion in 4H-SiC for possible spintronic applications is investigated. Ion implantation is used to introduce manganese in n-type and p-type 4H-SiC and subsequent heat treatment is performed in the temperature range of 1400 to 1800 °C. The depth distribution of manganese is recorded by secondary ion mass spectrometry and Rutherford backscattering spectrometry in the channeling direction is employed for characterization of crystal disorder. After the heat treatment, the crystal order is improved and a substantial rearrangement of manganese is revealed in the implanted region. However, no pronounced manganese diffusion deeper into the sample is recorded.