Influence of Heating and Cooling Rates of Post-Implantation Annealing Process on Al-Implanted 4H-SiC Epitaxial Samples

Laurent Ottaviani; Stéphane Biondo; Stéphane Morata; Olivier Palais; Thierry Sauvage; Frank Torregrosa

doi:10.4028/www.scientific.net/MSF.645-648.717

Paper Titles

Effects of Implantation Temperature on Sheet and Contact Resistance of Heavily Al Implanted 4H-SiC
p.705

Ultra Fast High Temperature Microwave Annealing of Ion Implanted Large Bandgap Semiconductors
p.709

Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC
p.713

Influence of Heating and Cooling Rates of Post-Implantation Annealing Process on Al-Implanted 4H-SiC Epitaxial Samples
p.717

Effects of Helium Implantation on the Mechanical Properties of 4H-SiC
p.721

Novel Cap Annealing Process for SiC Crystal Using ECR-Sputtered Carbon Films and ECR Plasma Ashing
p.725

TEM Observations of Ti/AlNi/Au Contacts on p-Type 4H-SiC
p.729

Comparative Study of Ohmic Contact Metallizations to Nanocrystalline Diamond Films
p.733

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Influence of Heating and Cooling Rates of Post-Implantation Annealing Process on Al-Implanted 4H-SiC Epitaxial Samples

Abstract:

We report on topographical, structural and electrical measurements of aluminum-implanted and annealed 4H-SiC epitaxial samples. The influence of heating-up and cooling-down temperature rates on the SiC surface roughness, the crystal volume reordering and the dopant electrical activation was particularly studied. A higher heating-rate was found to preserve the rms roughness for annealing temperatures lower than 1700°C, and to improve the sheet resistance whatever the annealing temperature due to a better dopant activation (except for 1600°C process, which induced a dark zone in the sample volume). A complete activation was calculated for an annealing at 1700°C during 30 minutes, with a ramp-up at 20°C/s. Rising the cooling-down rate appeared to increase the sheet resistance, probably due to a higher concentration of point defects in the implanted layer.