TEM Observations of Ti/AlNi/Au Contacts on p-Type 4H-SiC

Bang Hung Tsao; Jacob W. Lawson; James D. Scofield; Javier Francisco Baca

doi:10.4028/www.scientific.net/MSF.645-648.729

Paper Titles

Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC
p.713

Influence of Heating and Cooling Rates of Post-Implantation Annealing Process on Al-Implanted 4H-SiC Epitaxial Samples
p.717

Effects of Helium Implantation on the Mechanical Properties of 4H-SiC
p.721

Novel Cap Annealing Process for SiC Crystal Using ECR-Sputtered Carbon Films and ECR Plasma Ashing
p.725

TEM Observations of Ti/AlNi/Au Contacts on p-Type 4H-SiC
p.729

Comparative Study of Ohmic Contact Metallizations to Nanocrystalline Diamond Films
p.733

Reliability Tests of Au-Metallized Ni-Based Ohmic Contacts to 4H-n-SiC with and without Nanocomposite Diffusion Barriers
p.737

SiC-Die-Attachment for High Temperature Applications
p.741

Characteristics of Gold Wire Bonds with Ti- and Ni-Based Contact Metallization to n-SiC for High Temperature Applications
p.745

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648TEM Observations of Ti/AlNi/Au Contacts on p-Type...

TEM Observations of Ti/AlNi/Au Contacts on p-Type 4H-SiC

Abstract:

Improved AlNi-based ohmic contacts to p-type 4H-SiC have been achieved using low energy ion (Al+)implantation, the addition of a thin Ti layer, and a novel two-step implant activation anneal process. AlNi/Au contacts with and without Ti were studied, which resulted in contact resistivities around 1.8x10-4 -cm2 and 2.0x10-3 -cm2 respectively. Even though these values were higher than those of the Ti/AlNi/W system, which was the focus of previous studies, the reduced anneal temperature (650 to 700°C) implies that Ti/AlNi/Au is a promising composite configuration. Cross-sectional TEM and EDX were used to investigate the interfacial structure of the contacts. One possible mechanism for the improved ohmic contact behavior is that the addition of Au and Ti resulted in a reduction barrier height.