TEM Observations of Ti/AlNi/Au Contacts on p-Type 4H-SiC

Abstract:

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Improved AlNi-based ohmic contacts to p-type 4H-SiC have been achieved using low energy ion (Al+)implantation, the addition of a thin Ti layer, and a novel two-step implant activation anneal process. AlNi/Au contacts with and without Ti were studied, which resulted in contact resistivities around 1.8x10-4 -cm2 and 2.0x10-3 -cm2 respectively. Even though these values were higher than those of the Ti/AlNi/W system, which was the focus of previous studies, the reduced anneal temperature (650 to 700°C) implies that Ti/AlNi/Au is a promising composite configuration. Cross-sectional TEM and EDX were used to investigate the interfacial structure of the contacts. One possible mechanism for the improved ohmic contact behavior is that the addition of Au and Ti resulted in a reduction barrier height.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

729-732

DOI:

10.4028/www.scientific.net/MSF.645-648.729

Citation:

B. H. Tsao et al., "TEM Observations of Ti/AlNi/Au Contacts on p-Type 4H-SiC", Materials Science Forum, Vols. 645-648, pp. 729-732, 2010

Online since:

April 2010

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$35.00

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