Reliability Tests of Au-Metallized Ni-Based Ohmic Contacts to 4H-n-SiC with and without Nanocomposite Diffusion Barriers
The reliability of Ni2Si/n-SiC ohmic contacts with Au overlayer either without or with Ta-Si-N diffusion barrier was investigated after long-time aging in air at 400oC and rapid thermal annealing in Ar up to 800oC. It is shown that aging of the Au/Ni2Si/n-SiC contacts in air at 400oC resulted in complete degradation due to both oxygen penetration and interdiffusion/reaction processes. In contrast, only a small change in properties was detected on the contacts annealed in Ar at 800°C. The stability of both electrical and structural properties of Au/TaSiN/Ni2Si/n-SiC thermally stressed contacts at different conditions points out their superior thermal stability.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
A. V. Kuchuk et al., "Reliability Tests of Au-Metallized Ni-Based Ohmic Contacts to 4H-n-SiC with and without Nanocomposite Diffusion Barriers", Materials Science Forum, Vols. 645-648, pp. 737-740, 2010