Reliability Tests of Au-Metallized Ni-Based Ohmic Contacts to 4H-n-SiC with and without Nanocomposite Diffusion Barriers

Abstract:

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The reliability of Ni2Si/n-SiC ohmic contacts with Au overlayer either without or with Ta-Si-N diffusion barrier was investigated after long-time aging in air at 400oC and rapid thermal annealing in Ar up to 800oC. It is shown that aging of the Au/Ni2Si/n-SiC contacts in air at 400oC resulted in complete degradation due to both oxygen penetration and interdiffusion/reaction processes. In contrast, only a small change in properties was detected on the contacts annealed in Ar at 800°C. The stability of both electrical and structural properties of Au/TaSiN/Ni2Si/n-SiC thermally stressed contacts at different conditions points out their superior thermal stability.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

737-740

DOI:

10.4028/www.scientific.net/MSF.645-648.737

Citation:

A. V. Kuchuk et al., "Reliability Tests of Au-Metallized Ni-Based Ohmic Contacts to 4H-n-SiC with and without Nanocomposite Diffusion Barriers", Materials Science Forum, Vols. 645-648, pp. 737-740, 2010

Online since:

April 2010

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$35.00

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