Reliability Tests of Au-Metallized Ni-Based Ohmic Contacts to 4H-n-SiC with and without Nanocomposite Diffusion Barriers

Andrian V. Kuchuk; M. Guziewicz; Renata Ratajczak; Marek Wzorek; V.P. Kladko; Anna Piotrowska

doi:10.4028/www.scientific.net/MSF.645-648.737

Paper Titles

Effects of Helium Implantation on the Mechanical Properties of 4H-SiC
p.721

Novel Cap Annealing Process for SiC Crystal Using ECR-Sputtered Carbon Films and ECR Plasma Ashing
p.725

TEM Observations of Ti/AlNi/Au Contacts on p-Type 4H-SiC
p.729

Comparative Study of Ohmic Contact Metallizations to Nanocrystalline Diamond Films
p.733

Reliability Tests of Au-Metallized Ni-Based Ohmic Contacts to 4H-n-SiC with and without Nanocomposite Diffusion Barriers
p.737

SiC-Die-Attachment for High Temperature Applications
p.741

Characteristics of Gold Wire Bonds with Ti- and Ni-Based Contact Metallization to n-SiC for High Temperature Applications
p.745

Development of a Wire-Bond Technology for SiC High Temperature Applications
p.749

Recent Advances in Surface Preparation of Silicon Carbide and other Wide Band Gap Materials
p.753

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Reliability Tests of Au-Metallized Ni-Based Ohmic Contacts to 4H-n-SiC with and without Nanocomposite Diffusion Barriers

Abstract:

The reliability of Ni2Si/n-SiC ohmic contacts with Au overlayer either without or with Ta-Si-N diffusion barrier was investigated after long-time aging in air at 400oC and rapid thermal annealing in Ar up to 800oC. It is shown that aging of the Au/Ni2Si/n-SiC contacts in air at 400oC resulted in complete degradation due to both oxygen penetration and interdiffusion/reaction processes. In contrast, only a small change in properties was detected on the contacts annealed in Ar at 800°C. The stability of both electrical and structural properties of Au/TaSiN/Ni2Si/n-SiC thermally stressed contacts at different conditions points out their superior thermal stability.