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Paper Titles
Comparative Study of Ohmic Contact Metallizations to Nanocrystalline Diamond Films
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Reliability Tests of Au-Metallized Ni-Based Ohmic Contacts to 4H-n-SiC with and without Nanocomposite Diffusion Barriers
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SiC-Die-Attachment for High Temperature Applications
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Characteristics of Gold Wire Bonds with Ti- and Ni-Based Contact Metallization to n-SiC for High Temperature Applications
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Development of a Wire-Bond Technology for SiC High Temperature Applications
p.749
Recent Advances in Surface Preparation of Silicon Carbide and other Wide Band Gap Materials
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Reactive-Ion-Etching Induced Deep Levels Observed in n-Type and p-Type 4H-SiC
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Morphology Improvement of Step Bunching on 4H-SiC Wafers by Polishing Technique
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Fabrication and Use of Atomically Smooth Steps on 6H-SiC for Calibration of z-Displacements in Scanning Probe Microscopy
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Development of a Wire-Bond Technology for SiC High Temperature Applications

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Abstract:

In this paper a wire-bond technology for high temperatures (up to 500°C) based on silver-wire is presented. The mechanical properties of silver thick-wire wedge bonds are analyzed and compared to previously presented silver-stripes fastened onto the chip with the Low Temperature Joining Technique (LTJT) and to common aluminum thick-wire.

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Silicon Carbide and Related Materials 2009 View Preview

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Periodical:

Materials Science Forum (Volumes 645-648)

Pages:

749-752

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.749

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Online since:

April 2010

Authors:

Nicolas Heuck, F. Baars, Andrey Bakin, A. Waag

Keywords:

High Temperature Operation, Reliability

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© 2010 Trans Tech Publications Ltd. All Rights Reserved

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