Development of a Wire-Bond Technology for SiC High Temperature Applications

Abstract:

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In this paper a wire-bond technology for high temperatures (up to 500°C) based on silver-wire is presented. The mechanical properties of silver thick-wire wedge bonds are analyzed and compared to previously presented silver-stripes fastened onto the chip with the Low Temperature Joining Technique (LTJT) and to common aluminum thick-wire.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

749-752

DOI:

10.4028/www.scientific.net/MSF.645-648.749

Citation:

N. Heuck et al., "Development of a Wire-Bond Technology for SiC High Temperature Applications", Materials Science Forum, Vols. 645-648, pp. 749-752, 2010

Online since:

April 2010

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Price:

$35.00

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