Development of a Wire-Bond Technology for SiC High Temperature Applications
In this paper a wire-bond technology for high temperatures (up to 500°C) based on silver-wire is presented. The mechanical properties of silver thick-wire wedge bonds are analyzed and compared to previously presented silver-stripes fastened onto the chip with the Low Temperature Joining Technique (LTJT) and to common aluminum thick-wire.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
N. Heuck et al., "Development of a Wire-Bond Technology for SiC High Temperature Applications", Materials Science Forum, Vols. 645-648, pp. 749-752, 2010