Fabrication and Use of Atomically Smooth Steps on 6H-SiC for Calibration of z-Displacements in Scanning Probe Microscopy

Abstract:

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Atomic-force microscopy and scanning tunnel electron microscopy have been used to study the surface of single-crystal 6H-SiC (0001) substrates subjected to step-by-step high-temperature annealing in vacuum. An annealing procedure leading to surface structuring by atomically smooth steps with heights of 0.75 and 1.5 nm has been found. It is suggested to use the structured surfaces as test objects for z-calibration of scanning probe microscopes.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

767-770

DOI:

10.4028/www.scientific.net/MSF.645-648.767

Citation:

S. P. Lebedev et al., "Fabrication and Use of Atomically Smooth Steps on 6H-SiC for Calibration of z-Displacements in Scanning Probe Microscopy", Materials Science Forum, Vols. 645-648, pp. 767-770, 2010

Online since:

April 2010

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$35.00

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