Fabrication and Use of Atomically Smooth Steps on 6H-SiC for Calibration of z-Displacements in Scanning Probe Microscopy

Sergey P. Lebedev; P.A. Dement’ev; Alexander A. Lebedev; V.N. Petrov; Alexander N. Titkov

doi:10.4028/www.scientific.net/MSF.645-648.767

Paper Titles

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Fabrication and Use of Atomically Smooth Steps on 6H-SiC for Calibration of z-Displacements in Scanning Probe Microscopy

Abstract:

Atomic-force microscopy and scanning tunnel electron microscopy have been used to study the surface of single-crystal 6H-SiC (0001) substrates subjected to step-by-step high-temperature annealing in vacuum. An annealing procedure leading to surface structuring by atomically smooth steps with heights of 0.75 and 1.5 nm has been found. It is suggested to use the structured surfaces as test objects for z-calibration of scanning probe microscopes.

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Materials Science Forum (Volumes 645-648)

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767-770

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.767

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Online since:

April 2010

Authors:

Sergey P. Lebedev, P.A. Dement’ev, Alexander A. Lebedev, V.N. Petrov, Alexander N. Titkov

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Epitaxial Growth

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References

[1] D.A. Nasimov, D.V. Sheglov, E.E. Rodyakina, S.S. Kosolobov, L.I. Fedina, S.A. Teys, A.V. Latyshev: Physics of Low-Dimensional Structures Vol. 3/4 (2003), pp.146-152.

DOI: 10.1016/b978-0-12-810512-2.00008-1

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[2] A. Nakajima, H. Yokoya, Y. Furukawa, H. Yonezu: Journal of Applied Physics, Vol. 97 (2005), 104919.

Google Scholar