Self-Formation of Specific Pyramidal Planes in 4H-SiC Formed by Chlorine Based Ambience

Hidenori Koketsu; Tomoaki Hatayama; K. Amijima; Hiroshi Yano; Takashi Fuyuki

doi:10.4028/www.scientific.net/MSF.645-648.779

Paper Titles

Morphology Improvement of Step Bunching on 4H-SiC Wafers by Polishing Technique
p.763

Fabrication and Use of Atomically Smooth Steps on 6H-SiC for Calibration of z-Displacements in Scanning Probe Microscopy
p.767

Hexagonality and Stacking Sequence Dependence of Etching Properties in Cl₂-O₂-SiC System
p.771

Reduction of Surface Roughness of 4H-SiC by Catalyst-Referred Etching
p.775

Self-Formation of Specific Pyramidal Planes in 4H-SiC Formed by Chlorine Based Ambience
p.779

Impact of CF₄ Plasma Treatment on the Surface Roughness of Ion Implanted SiC Induced by High Temperature Annealing
p.783

4H-SiC Surface Morphology Etched Using ClF₃ Gas
p.787

Influence of Negative Charging on High Rate SiC Etching for GaN HEMT MMICs
p.791

Influence of the UV Light Intensity on the Photoelectrochemical Planarization Technique for Gallium Nitride
p.795

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Self-Formation of Specific Pyramidal Planes in 4H-SiC Formed by Chlorine Based Ambience

Abstract:

. 　 Crystallographically specific pyramidal planes in 4H-SiC could be naturally formed at mesa sidewalls by a thermal etching at 900oC in a chlorine (Cl2) based ambience. The mesa structures have been fabricated on the 4H-SiC C-face with 0-45o off-angle toward [11-20]. The etched surface was rather smooth, and bunched step structures on the specific pyramidal planes were not observed with atomic force and scanning electron microscopes. The formation mechanisms of the specific pyramidal planes at mesa sidewalls are discussed on the basis of these experimental results.