Self-Formation of Specific Pyramidal Planes in 4H-SiC Formed by Chlorine Based Ambience

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.   Crystallographically specific pyramidal planes in 4H-SiC could be naturally formed at mesa sidewalls by a thermal etching at 900oC in a chlorine (Cl2) based ambience. The mesa structures have been fabricated on the 4H-SiC C-face with 0-45o off-angle toward [11-20]. The etched surface was rather smooth, and bunched step structures on the specific pyramidal planes were not observed with atomic force and scanning electron microscopes. The formation mechanisms of the specific pyramidal planes at mesa sidewalls are discussed on the basis of these experimental results.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

779-782

DOI:

10.4028/www.scientific.net/MSF.645-648.779

Citation:

H. Koketsu et al., "Self-Formation of Specific Pyramidal Planes in 4H-SiC Formed by Chlorine Based Ambience", Materials Science Forum, Vols. 645-648, pp. 779-782, 2010

Online since:

April 2010

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$35.00

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