Hexagonality and Stacking Sequence Dependence of Etching Properties in Cl2-O2-SiC System

Abstract:

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Thermal etching of hexagonal (4H-, 6H-, 8H- and 10H-), rhombohedral (15R- and 21R-), and cubic (3C-) SiC Si-faces was performed between 900 and 1000oC in a mixed gas of chlorine (Cl2) and oxygen (O2). In the case of well oriented Si-faces, the 3C-SiC (111) substrate was etched fastest in polytypes. The etching rate in the dislocation-free area depended on the hexagonality. Etch pits with definite shapes appeared, which depend on the type of dislocation and crystal structures. On the basis of these results, etching properties are discussed.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

771-774

DOI:

10.4028/www.scientific.net/MSF.645-648.771

Citation:

T. Hatayama et al., "Hexagonality and Stacking Sequence Dependence of Etching Properties in Cl2-O2-SiC System", Materials Science Forum, Vols. 645-648, pp. 771-774, 2010

Online since:

April 2010

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$35.00

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