Hexagonality and Stacking Sequence Dependence of Etching Properties in Cl2-O2-SiC System

Tomoaki Hatayama; Hidenori Koketsu; Hiroshi Yano; Takashi Fuyuki

doi:10.4028/www.scientific.net/MSF.645-648.771

Paper Titles

Recent Advances in Surface Preparation of Silicon Carbide and other Wide Band Gap Materials
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Reactive-Ion-Etching Induced Deep Levels Observed in n-Type and p-Type 4H-SiC
p.759

Morphology Improvement of Step Bunching on 4H-SiC Wafers by Polishing Technique
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Fabrication and Use of Atomically Smooth Steps on 6H-SiC for Calibration of z-Displacements in Scanning Probe Microscopy
p.767

Hexagonality and Stacking Sequence Dependence of Etching Properties in Cl₂-O₂-SiC System
p.771

Reduction of Surface Roughness of 4H-SiC by Catalyst-Referred Etching
p.775

Self-Formation of Specific Pyramidal Planes in 4H-SiC Formed by Chlorine Based Ambience
p.779

Impact of CF₄ Plasma Treatment on the Surface Roughness of Ion Implanted SiC Induced by High Temperature Annealing
p.783

4H-SiC Surface Morphology Etched Using ClF₃ Gas
p.787

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Hexagonality and Stacking Sequence Dependence of...

Hexagonality and Stacking Sequence Dependence of Etching Properties in Cl₂-O₂-SiC System

Abstract:

Thermal etching of hexagonal (4H-, 6H-, 8H- and 10H-), rhombohedral (15R- and 21R-), and cubic (3C-) SiC Si-faces was performed between 900 and 1000oC in a mixed gas of chlorine (Cl2) and oxygen (O2). In the case of well oriented Si-faces, the 3C-SiC (111) substrate was etched fastest in polytypes. The etching rate in the dislocation-free area depended on the hexagonality. Etch pits with definite shapes appeared, which depend on the type of dislocation and crystal structures. On the basis of these results, etching properties are discussed.

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Materials Science Forum (Volumes 645-648)

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771-774

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https://doi.org/10.4028/www.scientific.net/MSF.645-648.771

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April 2010

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Tomoaki Hatayama, Hidenori Koketsu, Hiroshi Yano, Takashi Fuyuki

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Etching

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