SiC-Die-Attachment for High Temperature Applications

Abstract:

In this paper a die-attachment technology for high temperature applications based on the Low Temperature Joining Technique (LTJT) is presented. The present challenge is to fit the thermal expansion as well as the mechanical properties of the die-attach layer to the characteristics of chip and substrate. While the classic LTJT is based on sintering a sub-micron silver paste at temperatures between 150°C and 300°C to bond an electronic device to a substrate, the modified procedure employs a powder mixture consisting of silver powder and special filling powder material. Type and amount of the filling material is dependent on the application and the used substrates. Considering a low thermal expansion and high electrical as well as thermal conductivity we chose SiC, TiC, and BN as filling materials in this work.

• Periodical: Materials Science Forum (Volumes 645-648)
• Pages: 741-744
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.645-648.741
• Online since: April 2010
• Authors: Nicolas Heuck, G. Palm, T. Sauerberg, A. Stranz, A. Waag, Andrey Bakin
• Keywords: High Temperature Operation, Reliability, Thermal Expansion

References

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[5] [10] [15] [20] [25] [30] [35] [40] [5] 10 15 20 SiC BN.

[5] [10] [15] [20] [25] [0] 5 10 15 20 Thermal expansion [10-6/K] % Filling-Material SiC BN % Filling-Material Shear Strength [N/mm2] a) b).