Comparative Study of Ohmic Contact Metallizations to Nanocrystalline Diamond Films

Marko J. Tadjer; Travis J. Anderson; Karl D. Hobart; Tatyana I. Feygelson; James E. Butler; Fritz J. Kub

doi:10.4028/www.scientific.net/MSF.645-648.733

Paper Titles

Influence of Heating and Cooling Rates of Post-Implantation Annealing Process on Al-Implanted 4H-SiC Epitaxial Samples
p.717

Effects of Helium Implantation on the Mechanical Properties of 4H-SiC
p.721

Novel Cap Annealing Process for SiC Crystal Using ECR-Sputtered Carbon Films and ECR Plasma Ashing
p.725

TEM Observations of Ti/AlNi/Au Contacts on p-Type 4H-SiC
p.729

Comparative Study of Ohmic Contact Metallizations to Nanocrystalline Diamond Films
p.733

Reliability Tests of Au-Metallized Ni-Based Ohmic Contacts to 4H-n-SiC with and without Nanocomposite Diffusion Barriers
p.737

SiC-Die-Attachment for High Temperature Applications
p.741

Characteristics of Gold Wire Bonds with Ti- and Ni-Based Contact Metallization to n-SiC for High Temperature Applications
p.745

Development of a Wire-Bond Technology for SiC High Temperature Applications
p.749

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Comparative Study of Ohmic Contact Metallizations to Nanocrystalline Diamond Films

Abstract:

Nanocrystalline diamond (NCD) films were deposited using plasma-enhanced chemical vapor deposition. The NCD films were Boron-doped for p-type conductivity, yielding sheet resistances from 6.17x1011 to 522.5 /. Four different metals were deposited as Ohmic contacts and investigated for contact resistance and thermal stability. Contact and film annealing was performed under different atmospheric conditions with variable N2 content.