Effects of Helium Implantation on the Mechanical Properties of 4H-SiC

Jean François Barbot; Marie France Beaufort; Valerie Audurier

doi:10.4028/www.scientific.net/MSF.645-648.721

Paper Titles

Effects of Implantation Temperature on Sheet and Contact Resistance of Heavily Al Implanted 4H-SiC
p.705

Ultra Fast High Temperature Microwave Annealing of Ion Implanted Large Bandgap Semiconductors
p.709

Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC
p.713

Influence of Heating and Cooling Rates of Post-Implantation Annealing Process on Al-Implanted 4H-SiC Epitaxial Samples
p.717

Effects of Helium Implantation on the Mechanical Properties of 4H-SiC
p.721

Novel Cap Annealing Process for SiC Crystal Using ECR-Sputtered Carbon Films and ECR Plasma Ashing
p.725

TEM Observations of Ti/AlNi/Au Contacts on p-Type 4H-SiC
p.729

Comparative Study of Ohmic Contact Metallizations to Nanocrystalline Diamond Films
p.733

Reliability Tests of Au-Metallized Ni-Based Ohmic Contacts to 4H-n-SiC with and without Nanocomposite Diffusion Barriers
p.737

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Effects of Helium Implantation on the Mechanical...

Effects of Helium Implantation on the Mechanical Properties of 4H-SiC

Abstract:

The evolution of mechanical properties of helium-implanted 4H-SiC at room temperature has been mainly studied by nanoindentation tests. The curves of hardness and elastic modulus present a maximum at low levels of damage while a degradation of the mechanical properties is observed for high levels of damage. However, when the concentration of implanted ions exceeds 0.5 %, complex defects (helium-vacancy defects) become predominant which results in the increase of both the hardness and the modulus. Under high fluence of helium implantation tiny bubbles form and the amorphous transition is observed above a critical level of damage.

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Materials Science Forum (Volumes 645-648)

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721-724

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https://doi.org/10.4028/www.scientific.net/MSF.645-648.721

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April 2010

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Jean François Barbot, Marie France Beaufort, Valerie Audurier

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