Novel Cap Annealing Process for SiC Crystal Using ECR-Sputtered Carbon Films and ECR Plasma Ashing

Shigeru Hirono; Hironori Torii; Tetsuya Tajima; Takao Amazawa; Shigeru Umemura; Tomoyuki Kamata; Yasuo Hirabayashi

doi:10.4028/www.scientific.net/MSF.645-648.725

Paper Titles

Ultra Fast High Temperature Microwave Annealing of Ion Implanted Large Bandgap Semiconductors
p.709

Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC
p.713

Influence of Heating and Cooling Rates of Post-Implantation Annealing Process on Al-Implanted 4H-SiC Epitaxial Samples
p.717

Effects of Helium Implantation on the Mechanical Properties of 4H-SiC
p.721

Novel Cap Annealing Process for SiC Crystal Using ECR-Sputtered Carbon Films and ECR Plasma Ashing
p.725

TEM Observations of Ti/AlNi/Au Contacts on p-Type 4H-SiC
p.729

Comparative Study of Ohmic Contact Metallizations to Nanocrystalline Diamond Films
p.733

Reliability Tests of Au-Metallized Ni-Based Ohmic Contacts to 4H-n-SiC with and without Nanocomposite Diffusion Barriers
p.737

SiC-Die-Attachment for High Temperature Applications
p.741

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Novel Cap Annealing Process for SiC Crystal Using...

Novel Cap Annealing Process for SiC Crystal Using ECR-Sputtered Carbon Films and ECR Plasma Ashing

Abstract:

A high dose impurity doping process for 4H-SiC crystals has been developed using electron cyclotron resonance (ECR) sputtered carbon cap film and ECR plasma ashing. ECR-sputtered carbon films are newly found crystalline carbon films of which the hardness is comparable to that of diamonds. Since this carbon film showed such a high thermal tolerance that the hardness did not change after 1900oC annealing, this carbon cap film worked well for suppressing roughening during annealing for aluminum-ion implanted 4H-SiC. Cap carbon film can be removed successfully by using high density ECR plasma ashing.