Novel Cap Annealing Process for SiC Crystal Using ECR-Sputtered Carbon Films and ECR Plasma Ashing

Abstract:

Article Preview

A high dose impurity doping process for 4H-SiC crystals has been developed using electron cyclotron resonance (ECR) sputtered carbon cap film and ECR plasma ashing. ECR-sputtered carbon films are newly found crystalline carbon films of which the hardness is comparable to that of diamonds. Since this carbon film showed such a high thermal tolerance that the hardness did not change after 1900oC annealing, this carbon cap film worked well for suppressing roughening during annealing for aluminum-ion implanted 4H-SiC. Cap carbon film can be removed successfully by using high density ECR plasma ashing.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

725-728

DOI:

10.4028/www.scientific.net/MSF.645-648.725

Citation:

S. Hirono et al., "Novel Cap Annealing Process for SiC Crystal Using ECR-Sputtered Carbon Films and ECR Plasma Ashing", Materials Science Forum, Vols. 645-648, pp. 725-728, 2010

Online since:

April 2010

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.