Novel Cap Annealing Process for SiC Crystal Using ECR-Sputtered Carbon Films and ECR Plasma Ashing
A high dose impurity doping process for 4H-SiC crystals has been developed using electron cyclotron resonance (ECR) sputtered carbon cap film and ECR plasma ashing. ECR-sputtered carbon films are newly found crystalline carbon films of which the hardness is comparable to that of diamonds. Since this carbon film showed such a high thermal tolerance that the hardness did not change after 1900oC annealing, this carbon cap film worked well for suppressing roughening during annealing for aluminum-ion implanted 4H-SiC. Cap carbon film can be removed successfully by using high density ECR plasma ashing.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
S. Hirono et al., "Novel Cap Annealing Process for SiC Crystal Using ECR-Sputtered Carbon Films and ECR Plasma Ashing", Materials Science Forum, Vols. 645-648, pp. 725-728, 2010