Significant Improvement in Reliability of Thermal Oxide on 4H-SiC (0001) Face Using Ammonia Post-Oxidation Annealing

Junji Senzaki; Takuma Suzuki; Atsushi Shimozato; Kenji Fukuda; Kazuo Arai; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.645-648.685

Paper Titles

Correlation between Schottky Contact Characteristics and Regions with a Low Barrier Height Revealed by the Electrochemical Deposition on 4H-SiC
p.669

Investigations on Surge Current Capability of SiC Schottky Diodes by Implementation of New Pad Metallizations
p.673

On the Viability of Au/3C-SiC Schottky Barrier Diodes
p.677

Comparison of the Threshold-Voltage Stability of SiC MOSFETs with Thermally Grown and Deposited Gate Oxides
p.681

Significant Improvement in Reliability of Thermal Oxide on 4H-SiC (0001) Face Using Ammonia Post-Oxidation Annealing
p.685

Consequences of NO Thermal Treatments in the Properties of Dielectric Films / SiC Structures
p.689

The Limits of Post Oxidation Annealing in NO
p.693

Electrical Activation of B⁺-Ions Implanted into 4H-SiC
p.697

Manganese in 4H-SiC
p.701

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Significant Improvement in Reliability of Thermal Oxide on 4H-SiC (0001) Face Using Ammonia Post-Oxidation Annealing

Abstract:

The effect of ammonia (NH3) post-oxidation annealing (POA) technique on the reliability of thermal oxides grown on a n-type 4H-SiC (0001) face by dry oxidation has been investigated. Comparing other POA techniques using hydrogen and nitrous oxide gases, it was indicated that the NH3 POA after dry oxidation remarkably improves the insulating properties of thermal oxides. The mode value of field-to-breakdown for thermal oxides prepared by NH3 POA was 12.1 MV/cm. The charge-to-breakdown (QBD) in the NH3 POA sample was the highest in all samples, and the QBD value at 63% cumulative failure rate was 19.1 C/cm2. In addition, the NH3 POA maintained excellent electron trapping characteristics of thermal oxides against the electron injection.