Investigations on Surge Current Capability of SiC Schottky Diodes by Implementation of New Pad Metallizations

Jochen Hilsenbeck; Michael Treu; Roland Rupp; Kathrin Rüschenschmidt; Ronny Kern; Matthias Holz

doi:10.4028/www.scientific.net/MSF.645-648.673

Paper Titles

Influence of Processing and of Material Defects on the Electrical Characteristics of SiC-SBDs and SiC-MOSFETs
p.655

Experimental Evaluation of Different Passivation Layers on the Performance of 3kV 4H-SiC BJTs
p.661

Novel Fabrication Technology for Devices with nearly Temperature-Independent Forward Characteristics
p.665

Correlation between Schottky Contact Characteristics and Regions with a Low Barrier Height Revealed by the Electrochemical Deposition on 4H-SiC
p.669

Investigations on Surge Current Capability of SiC Schottky Diodes by Implementation of New Pad Metallizations
p.673

On the Viability of Au/3C-SiC Schottky Barrier Diodes
p.677

Comparison of the Threshold-Voltage Stability of SiC MOSFETs with Thermally Grown and Deposited Gate Oxides
p.681

Significant Improvement in Reliability of Thermal Oxide on 4H-SiC (0001) Face Using Ammonia Post-Oxidation Annealing
p.685

Consequences of NO Thermal Treatments in the Properties of Dielectric Films / SiC Structures
p.689

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Investigations on Surge Current Capability of SiC Schottky Diodes by Implementation of New Pad Metallizations

Abstract:

In this paper we describe how a merged pn Schottky diode (MPS diode) is capable to drive surge current levels far beyond the normal current of the diode and how to improve the device in order to achieve even higher surge current levels. For a sine half wave of 10 µs an 8A MPS diode (size: 2.52mm2) with conventional Al pad metallization shows surge current levels of greater than 500A, using Cu it can be increased to ~900A. For 10ms pulse length a different behaviour was observed, here diodes with Al pad metallization show a higher surge current level (80A) compared to Cu pad metallization (~ 40A). The root cause for this negative result at longer pulse time is based in a chemical interaction between Cu and the Schottky metal (Ti). Additionally, an outlook is given how Cu can contribute to improved surge current capability also at longer pulse lengths.