Experimental Evaluation of Different Passivation Layers on the Performance of 3kV 4H-SiC BJTs

Reza Ghandi; Martin Domeij; Romain Esteve; Benedetto Buono; Adolf Schöner; Ji Sheng Han; Sima Dimitrijev; Sergey A. Reshanov; Carl Mikael Zetterling; Mikael Östling

doi:10.4028/www.scientific.net/MSF.645-648.661

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HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Experimental Evaluation of Different Passivation...

Experimental Evaluation of Different Passivation Layers on the Performance of 3kV 4H-SiC BJTs

Abstract:

In this work, the electrical performance in terms of maximum current gain, ON-resistance and blocking capability has been compared for 4H-SiC BJTs passivated with different surface passivation layers. Variation in BJT performance has been correlated to densities of interface traps and fixed oxide charge, as evaluated through MOS capacitors. Six different methods were used to fabricate SiO2 surface passivation on BJT samples from the same wafer. The highest current gain was obtained for PECVD deposited SiO2 which was annealed in N2O ambient at 1100 °C during 3 hours. Variations in breakdown voltage for different surface passivations were also found, and this is attributed to differences in fixed oxide charge that can affect the optimum dose of the high voltage JTE termination.

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Materials Science Forum (Volumes 645-648)

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661-664

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.661

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April 2010

Authors:

Reza Ghandi, Martin Domeij, Romain Esteve, Benedetto Buono, Adolf Schöner, Ji Sheng Han, Sima Dimitrijev, Sergey A. Reshanov, Carl Mikael Zetterling, Mikael Östling

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Bipolar Junction Transistor (BJT), Passivation, Power Device

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References

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