Effects of Thermal Oxidation on Deep Levels Generated by Ion Implantation into n-Type and p-Type 4H-SiC

Abstract:

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The authors have investigated effects of thermal oxidation on deep levels in the whole energy range of bandgap of 4H-SiC which are generated by ion implantation, by deep level transient spectroscopy (DLTS). The dominant defects in n-type samples after ion implantation and high-temperature annealing at 1700oC, IN3 (Z1/2: Ec – 0.63 eV) and IN9 (EH6/7: Ec – 1.5 eV) in low-dose-implanted samples, can be remarkably reduced by oxidation at 1150oC. However, in p-type samples, the IP8 (HK4: Ev + 1.4 eV) survives and additional defects, several defects such as IP4 (HK0: Ev + 0.72 eV) appear after thermal oxidation in low-dose-implanted samples. The defects except for the IP8 center can be reduced by subsequent annealing at 1400oC. These phenomena are explained by a model that excess interstitials are generated at the oxidizing interface and diffuse into the bulk region.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

651-654

DOI:

10.4028/www.scientific.net/MSF.645-648.651

Citation:

K. Kawahara et al., "Effects of Thermal Oxidation on Deep Levels Generated by Ion Implantation into n-Type and p-Type 4H-SiC", Materials Science Forum, Vols. 645-648, pp. 651-654, 2010

Online since:

April 2010

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$35.00

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