Influence of Processing and of Material Defects on the Electrical Characteristics of SiC-SBDs and SiC-MOSFETs

Kenji Fukuda; Akimasa Kinoshita; Takasumi Ohyanagi; Ryouji Kosugi; T. Sakata; Y. Sakuma; Junji Senzaki; A. Minami; Atsushi Shimozato; Takuma Suzuki; Tetsuo Hatakeyama; Takashi Shinohe; Hirofumi  Matsuhata; Hiroshi Yamaguchi; Ichiro  Nagai; Shinsuke Harada; Kyoichi Ichinoseki; Tsutomu Yatsuo; Hajime Okumura; Kazuo Arai

doi:10.4028/www.scientific.net/MSF.645-648.655

Paper Titles

Techniques for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates
p.633

Transport Properties of Single-Layer Epitaxial Graphene on 6H-SiC (0001)
p.637

Defect Control in Growth and Processing of 4H-SiC for Power Device Applications
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Effects of Thermal Oxidation on Deep Levels Generated by Ion Implantation into n-Type and p-Type 4H-SiC
p.651

Influence of Processing and of Material Defects on the Electrical Characteristics of SiC-SBDs and SiC-MOSFETs
p.655

Experimental Evaluation of Different Passivation Layers on the Performance of 3kV 4H-SiC BJTs
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Novel Fabrication Technology for Devices with nearly Temperature-Independent Forward Characteristics
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Correlation between Schottky Contact Characteristics and Regions with a Low Barrier Height Revealed by the Electrochemical Deposition on 4H-SiC
p.669

Investigations on Surge Current Capability of SiC Schottky Diodes by Implementation of New Pad Metallizations
p.673

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Influence of Processing and of Material Defects on the Electrical Characteristics of SiC-SBDs and SiC-MOSFETs

Abstract:

The influences of processing and material defects on the electrical characteristics of large-capacity (approximately 100A) SiC-SBDs and SiC-MOSFETs have been investigated. In the case of processing defects, controlled activation annealing is the most important factor. On the other hand for material defects, the number of epitaxial defects must be decreased to zero for both SBDs and MOSFETs. The dislocation defects in SiC wafers are dangerous for the breakdown voltage of MOSFETs. However, they are not killer defects. If the epitaxial defect density is sufficiently low and the dislocation density is in the order of 10000cm-2, the long- term reliability of the gate oxide at the electric field of 3MV/cm can be guaranteed.