Transport Properties of Single-Layer Epitaxial Graphene on 6H-SiC (0001)

Abstract:

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We report on electrical measurements on epitaxial graphene on 6H-SiC (0001). The graphene layers were fabricated by thermal decomposition in Argon atmosphere. Large van der Pauw structures and Hall bars were patterned by e-beam lithography, the Hall bars ranged from rather large structures down to sub-micrometer sized Hall bars entirely placed on atomically °at substrate terraces. We present Hall measurements in a broad temperature range, Shubnikov de Haas oscillations and quantum Hall steps. The data lead to the conclusion that electrons in epitaxial graphene have the same quasi-relativistic properties previously shown in exfoliated graphene. A remarkable di®erence, however, is the stronger coupling to substrate phonons and the relatively high charging being an intrinsic property of this epitaxial system.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

637-641

DOI:

10.4028/www.scientific.net/MSF.645-648.637

Citation:

J. Jobst et al., "Transport Properties of Single-Layer Epitaxial Graphene on 6H-SiC (0001)", Materials Science Forum, Vols. 645-648, pp. 637-641, 2010

Online since:

April 2010

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Price:

$35.00

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