Transport Properties of Single-Layer Epitaxial Graphene on 6H-SiC (0001)
We report on electrical measurements on epitaxial graphene on 6H-SiC (0001). The graphene layers were fabricated by thermal decomposition in Argon atmosphere. Large van der Pauw structures and Hall bars were patterned by e-beam lithography, the Hall bars ranged from rather large structures down to sub-micrometer sized Hall bars entirely placed on atomically °at substrate terraces. We present Hall measurements in a broad temperature range, Shubnikov de Haas oscillations and quantum Hall steps. The data lead to the conclusion that electrons in epitaxial graphene have the same quasi-relativistic properties previously shown in exfoliated graphene. A remarkable di®erence, however, is the stronger coupling to substrate phonons and the relatively high charging being an intrinsic property of this epitaxial system.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
J. Jobst et al., "Transport Properties of Single-Layer Epitaxial Graphene on 6H-SiC (0001)", Materials Science Forum, Vols. 645-648, pp. 637-641, 2010