Transport Properties of Single-Layer Epitaxial Graphene on 6H-SiC (0001)

Abstract:

We report on electrical measurements on epitaxial graphene on 6H-SiC (0001). The graphene layers were fabricated by thermal decomposition in Argon atmosphere. Large van der Pauw structures and Hall bars were patterned by e-beam lithography, the Hall bars ranged from rather large structures down to sub-micrometer sized Hall bars entirely placed on atomically °at substrate terraces. We present Hall measurements in a broad temperature range, Shubnikov de Haas oscillations and quantum Hall steps. The data lead to the conclusion that electrons in epitaxial graphene have the same quasi-relativistic properties previously shown in exfoliated graphene. A remarkable di®erence, however, is the stronger coupling to substrate phonons and the relatively high charging being an intrinsic property of this epitaxial system.

• Periodical: Materials Science Forum (Volumes 645-648)
• Pages: 637-641
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.645-648.637
• Online since: April 2010
• Authors: Johannes Jobst, Daniel Waldmann, Konstantin V. Emtsev, Thomas Seyller, Heiko B. Weber
• Keywords: Epitaxial Growth, Graphen, Hall Effect

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