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HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Defect Control in Growth and Processing of 4H-SiC...

Defect Control in Growth and Processing of 4H-SiC for Power Device Applications

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Abstract:

Extended defects and deep levels generated during epitaxial growth of 4H-SiC and device processing have been reviewed. Three types in-grown stacking faults, (6,2), (5,3), and (4,4) structures, have been identified in epilayers with a density of 1-10 cm-2. Almost all the major deep levels present in as-grown epilayers have been eliminated (< 1x1011 cm-3) by two-step annealing, thermal oxidation at 1150-1300oC followed by Ar annealing at 1550oC. The proposed two-step annealing is also effective in reducing various deep levels generated by ion implantation and dry etching. The interface properties and MOSFET characteristics with several gate oxides are presented. By utilizing the deposited SiO2 annealed in N2O at 1300oC, a lowest interface state density and a reasonably high channel mobility for both n- and p-channel MOSFETs with an improved oxide reliability have been attained.

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Silicon Carbide and Related Materials 2009

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Periodical:

Materials Science Forum (Volumes 645-648)

Pages:

645-650

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.645

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Online since:

April 2010

Authors:

Tsunenobu Kimoto, Gan Feng, Toru Hiyoshi, Koutarou Kawahara, Masato Noborio, Jun Suda

Keywords:

Carrier Lifetime, Deep Level, Extended Defect, Ion Implantation, MOS Capacitor

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© 2010 Trans Tech Publications Ltd. All Rights Reserved

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[1] R.T. Leonard et al.: Mat. Sci. Forum, Vols. 600-603 (2009), p.7.

[2] IEEE Trans. Electron Devices Vol. 55 (2008), No. 8 (Special Issue on SiC Electronics).

[3] V.V. Afanas'ev, M. Bassler, G. Pensl, and M. Schulz: phys. stat. sol. (a), Vol. 162 (1997), p.321.

[4] M. Benamara et al: Appl. Phys. Lett. Vol. 86 (2005), 021905.

[5] H. Tsuchida, I. Kamata, and M. Nagano: J. Crystal Growth, Vol. 306 (2007), p.254.

[6] T. Kimoto, N. Miyamoto, and H. Matsunami: IEEE Trans. Electron Devices Vol. 46 (1999), p.471.

[7] H. Fujiwara, T. Kimoto, and H. Matsunami: Appl. Phys. Lett. Vol. 87 (2005), 051912.

[8] M. Tajima, E. Higashi, T. Hayashi, H. Kinoshita, and H. Shiomi: Appl. Phys. Lett., Vol. 86 (2005), 061914.

[9] G. Feng, J. Suda, and T. Kimoto: Appl. Phys. Lett., Vol. 92 (2008), 221906.

[10] G. Feng, J. Suda, and T. Kimoto: Appl. Phys. Lett., Vol. 94 (2009), 091910.

[11] T. Hori, K. Danno, and T. Kimoto: J. Crystal Growth, Vol. 306 (2007), p.297.

[12] H. Tsuchida, I. Kamata, and M. Nagano: J. Crystal Growth, 310 (2008), p.757.

[13] J.P. Bergman et al.: Mat. Sci. Forum, Vols. 353-356 (2001), p.299.

[14] J. Senzaki, K. Kojima, T. Kato, A. Shimozato, and K. Fukuda: Appl. Phys. Lett., Vol. 89 (2006), 022909.

DOI: 10.1063/1.2221525

[15] S. Ha, P. Mieszkowski, M. Skowronski, and L.B. Rowland: J. Crystal Growth, Vol. 244 (2002), p.257.

[16] J.J. Sumakeris et al.: Mat. Sci. Forum, Vols. 556-557 (2007), p.77.

[17] H. Tsuchida et al. : Mat. Sci. Forum, Vols. 483-485 (2005), p.97.

[18] R.E. Starlbush et al.: Appl. Phys. Lett., Vol. 94 (2009), 041916.

[19] X. Zhang et al.: J. Appl. Phys., Vol. 102 (2007), 093520.

[20] T. Dalibor et al.: phys. status solidi (a), Vol. 162 (1997), p.199.

[21] C. Hemmingsson et al.: J. Appl. Phys., Vol. 81 (1997), p.6155.

[22] K. Danno and T. Kimoto: J. Appl. Phys., Vol. 101 (2007), 103704.

[23] L. Storasta et al.: Appl. Phys. Lett., Vol. 78 (2001), p.46.

[24] P.B. Klein et al.: Appl. Phys. Lett., Vol. 88 (2006), 052110.

[25] K. Danno, D. Nakamura, and T. Kimoto: Appl. Phys. Lett., Vol. 90 (2007), 202109.

[26] L. Storasta, J. P. Bergman, E. Janzén, A. Henry, and J. Lu: J. Appl. Phys., Vol. 96 (2004), p.4909.

[27] K. Danno and T. Kimoto: J. Appl. Phys., Vol. 100 (2006), 113728.

[28] K. Danno, T. Hori, and T. Kimoto: J. Appl. Phys., Vol. 101 (2007), 053709.

[29] L. Storasta and H. Tsuchida: Appl. Phys. Lett., Vol. 90 (2007), 062116.

[30] T. Hiyoshi and T. Kimoto: Appl. Phys. Exp., Vol. 2 (2009), 041101.

[31] K. Taniguchi, Y. Shibata, and C. Hamaguchi: J. Appl. Phys., Vol. 65 (1989), p.2723.

[32] Y. Hijikata, H. Yaguchi, and S. Yoshida: Appl. Phys. Exp., Vol. 2 (2009), 021203.

[33] T. Hiyoshi and T. Kimoto: Appl. Phys. Exp., Vol. 2 (2009), 091101.

[34] T. Ohno and N. Kobayashi: J. Appl. Phys., Vol. 91 (2002), p.4136.

[35] M. Nagano et al.: Mat. Sci. Forum, Vols. 615-617 (2009), p.477.

[36] K. Kawahara, G. Alfieri, and T. Kimoto: J. Appl. Phys., Vol. 106 (2009), 013719.

[37] K. Kawahara, T. Hiyoshi, G. Alfieri, G. Pensl, and T. Kimoto: these proceedings.

[38] K. Kawahara, G. Alfieri, M. Krieger, and T. Kimoto: these proceedings.

[39] N.S. Saks and A.K. Agarwal: Appl. Phys. Lett., Vol. 77 (2000), p.3281.

[40] S. Dimitrijev, H.F. Li, H.B. Harrison, D. Sweatman: IEEE Trans. Electron Dev. Lett., Vol. 18 (1997), p.175.

[41] G.Y. Chung et al.: IEEE Electron Device Lett., Vol. 22 (2001), p.176.

[42] T. Zheleva, A. Lelis, G. Duscher, F. Liu, I. Levin, and M. Das: Appl. Phys. Lett., Vol. 93 (2008), 022108.

DOI: 10.1063/1.2949081

[43] T. Kimoto, Y. Kanzaki, M. Noborio, H. Kawano: Jpn. J. Appl. Phys., Vol. 44 (2005), p.1213.

[44] T. Kimoto, H. Kawano, M. Noborio, J. Suda: Mater. Sci. Forum, Vols. 527-529 (2006), p.987.

[45] M. Grieb et al.: Mat. Sci. Forum, Vols. 615-617 (2009), p.521.

[46] M. Noborio, J. Suda, and T. Kimoto: IEEE Trans. Electron Devices, Vol. 56 (2009), p. (1953).