Correlation between Schottky Contact Characteristics and Regions with a Low Barrier Height Revealed by the Electrochemical Deposition on 4H-SiC

Masashi Kato; H. Ono; Masaya Ichimura

doi:10.4028/www.scientific.net/MSF.645-648.669

Paper Titles

Effects of Thermal Oxidation on Deep Levels Generated by Ion Implantation into n-Type and p-Type 4H-SiC
p.651

Influence of Processing and of Material Defects on the Electrical Characteristics of SiC-SBDs and SiC-MOSFETs
p.655

Experimental Evaluation of Different Passivation Layers on the Performance of 3kV 4H-SiC BJTs
p.661

Novel Fabrication Technology for Devices with nearly Temperature-Independent Forward Characteristics
p.665

Correlation between Schottky Contact Characteristics and Regions with a Low Barrier Height Revealed by the Electrochemical Deposition on 4H-SiC
p.669

Investigations on Surge Current Capability of SiC Schottky Diodes by Implementation of New Pad Metallizations
p.673

On the Viability of Au/3C-SiC Schottky Barrier Diodes
p.677

Comparison of the Threshold-Voltage Stability of SiC MOSFETs with Thermally Grown and Deposited Gate Oxides
p.681

Significant Improvement in Reliability of Thermal Oxide on 4H-SiC (0001) Face Using Ammonia Post-Oxidation Annealing
p.685

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Correlation between Schottky Contact...

Correlation between Schottky Contact Characteristics and Regions with a Low Barrier Height Revealed by the Electrochemical Deposition on 4H-SiC

Abstract:

We performed electrochemical deposition of ZnO on the surfaces of 4H-SiC epilayers and characterized Ni Schottky diodes fabricated on the same epilayers. We found correlation between positions where ZnO was deposited and positions where Schottky barrier height of Ni contacts is lower than of the rest of the contacts. Parts of the surface where ZnO was deposited were observed by AFM after removal of the ZnO layer, and we discussed the origin of the low Schottky barrier height from the AFM images.