Correlation between Schottky Contact Characteristics and Regions with a Low Barrier Height Revealed by the Electrochemical Deposition on 4H-SiC

Abstract:

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We performed electrochemical deposition of ZnO on the surfaces of 4H-SiC epilayers and characterized Ni Schottky diodes fabricated on the same epilayers. We found correlation between positions where ZnO was deposited and positions where Schottky barrier height of Ni contacts is lower than of the rest of the contacts. Parts of the surface where ZnO was deposited were observed by AFM after removal of the ZnO layer, and we discussed the origin of the low Schottky barrier height from the AFM images.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

669-672

DOI:

10.4028/www.scientific.net/MSF.645-648.669

Citation:

M. Kato et al., "Correlation between Schottky Contact Characteristics and Regions with a Low Barrier Height Revealed by the Electrochemical Deposition on 4H-SiC", Materials Science Forum, Vols. 645-648, pp. 669-672, 2010

Online since:

April 2010

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$35.00

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