Performance of 15 mm2 1200 V Normally-Off SiC VJFETs with 120 A Saturation Current

Abstract:

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Recently 63 m, 100 m, and 125 m 1200 V normally-off SiC VJFETs have become commercially available and 99% efficiency has been demonstrated in a single-phase solar inverter using these components [1]. They exhibit low specific on-resistance (3 m∙cm2), high saturation current density (1000 A∙cm-2), and low switching losses. For some applications, including 30 to 100 kW inverter modules and those requiring high surge current capability, larger die size is required. This paper reports the static and dynamic performance of 15 mm2 1200 V normally-off VJFETs with 25 m on-resistance and 120 A saturation current at 25 °C.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

937-940

DOI:

10.4028/www.scientific.net/MSF.645-648.937

Citation:

A. Ritenour et al., "Performance of 15 mm2 1200 V Normally-Off SiC VJFETs with 120 A Saturation Current ", Materials Science Forum, Vols. 645-648, pp. 937-940, 2010

Online since:

April 2010

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Price:

$35.00

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