Characterization of SiC JFETs and its Application in Extreme Temperature (over 450°C) Circuit Design

Jie Yang; John Fraley; Bryon Western; Marcelo Schupbach; Alexander B. Lostetter

doi:10.4028/www.scientific.net/MSF.645-648.949

Paper Titles

Fast Switching with SiC VJFETs - Influence of the Device Topology
p.933

Performance of 15 mm² 1200 V Normally-Off SiC VJFETs with 120 A Saturation Current
p.937

Radiation Hardness Evaluation of SiC-BGSIT
p.941

Physics of Hysteresis in MESFET Drain I-V Characteristics: Simulation Approach
p.945

Characterization of SiC JFETs and its Application in Extreme Temperature (over 450°C) Circuit Design
p.949

Amplitude Shift Keyed Radio Communications for Hostile Environments
p.953

Minimization of Drain-to-Gate Interaction in a SiC JFET Inverter Using an External Gate-Source Capacitor
p.957

Design and Gate Drive Considerations for Epitaxial 1.2 kV Buried Grid N-on and N-off JFETs for Operation at 250°C
p.961

Circuit Modeling of Vertical Buried-Grid SiC JFETs
p.965

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Characterization of SiC JFETs and its Application...

Characterization of SiC JFETs and its Application in Extreme Temperature (over 450°C) Circuit Design

Abstract:

In order to facilitate the circuit design and simulation at extreme temperatures, APEI, Inc. fully characterized a custom-built SiC VJFET transistor at temperatures up to 525 °C and built a Spice model based on the characterization data. The temperature effects were also formulized in this Spice model to ensure its uniform applicability over the entire temperature range. Test circuits of a differential amplifier and a multivibrator were built and tested from room temperature up to 450 °C to validate the proposed SiC JFET model, which could be widely applied in Spice based circuit simulation packages.