Characterization of SiC JFETs and its Application in Extreme Temperature (over 450°C) Circuit Design
In order to facilitate the circuit design and simulation at extreme temperatures, APEI, Inc. fully characterized a custom-built SiC VJFET transistor at temperatures up to 525 °C and built a Spice model based on the characterization data. The temperature effects were also formulized in this Spice model to ensure its uniform applicability over the entire temperature range. Test circuits of a differential amplifier and a multivibrator were built and tested from room temperature up to 450 °C to validate the proposed SiC JFET model, which could be widely applied in Spice based circuit simulation packages.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
J. Yang et al., "Characterization of SiC JFETs and its Application in Extreme Temperature (over 450°C) Circuit Design ", Materials Science Forum, Vols. 645-648, pp. 949-952, 2010