Characterization of SiC JFETs and its Application in Extreme Temperature (over 450°C) Circuit Design

Abstract:

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In order to facilitate the circuit design and simulation at extreme temperatures, APEI, Inc. fully characterized a custom-built SiC VJFET transistor at temperatures up to 525 °C and built a Spice model based on the characterization data. The temperature effects were also formulized in this Spice model to ensure its uniform applicability over the entire temperature range. Test circuits of a differential amplifier and a multivibrator were built and tested from room temperature up to 450 °C to validate the proposed SiC JFET model, which could be widely applied in Spice based circuit simulation packages.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

949-952

DOI:

10.4028/www.scientific.net/MSF.645-648.949

Citation:

J. Yang et al., "Characterization of SiC JFETs and its Application in Extreme Temperature (over 450°C) Circuit Design ", Materials Science Forum, Vols. 645-648, pp. 949-952, 2010

Online since:

April 2010

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Price:

$35.00

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