Design and Gate Drive Considerations for Epitaxial 1.2 kV Buried Grid N-on and N-off JFETs for Operation at 250°C

Jang Kwon Lim; Mietek Bakowski; Hans Peter Nee

doi:10.4028/www.scientific.net/MSF.645-648.961

Paper Titles

Physics of Hysteresis in MESFET Drain I-V Characteristics: Simulation Approach
p.945

Characterization of SiC JFETs and its Application in Extreme Temperature (over 450°C) Circuit Design
p.949

Amplitude Shift Keyed Radio Communications for Hostile Environments
p.953

Minimization of Drain-to-Gate Interaction in a SiC JFET Inverter Using an External Gate-Source Capacitor
p.957

Design and Gate Drive Considerations for Epitaxial 1.2 kV Buried Grid N-on and N-off JFETs for Operation at 250°C
p.961

Circuit Modeling of Vertical Buried-Grid SiC JFETs
p.965

Performance, Reliability, and Robustness of 4H-SiC Power DMOSFETs
p.969

Effect of Band-Edge Interface Traps and Transition Region Mobility on Transport in 4H-SiC MOSFETs
p.975

Wafer-Level Hall Measurement on SiC MOSFET
p.979

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Design and Gate Drive Considerations for Epitaxial...

Design and Gate Drive Considerations for Epitaxial 1.2 kV Buried Grid N-on and N-off JFETs for Operation at 250°C

Abstract:

The 1.2 kV 4H-SiC buried-grid vertical JFET structures with Normally-on (N-on) and Normally-off (N-off) design were investigated by simulations. The conduction and switching properties were determined in the temperature range from -50°C to 250°C. In this paper, the characteristics of the N-on designs with threshold voltage (Vth) of -50 V and -10 V are compared with the N-off design (Vth=0). The presented data are for devices with the same channel length at 250°C. The results show that the on-resistance (Ron) decreases with increasing channel doping concentration and decreasing channel width. The presented turn-on, Eon, and turn-off, Eoff, energies per pulse are calculated under the switching conditions 100 A/cm2 and 600 V with a gate resistance of Rg=1 . For the two N-on designs the total switching losses, Esw=Eon+Eoff, differ less than 30% with Wch 0.7 m. With Wch=0.5 m the switching losses of N-off design are almost one order of magnitude higher than those of the N-on design with Vth = -50 V.