Wafer-Level Hall Measurement on SiC MOSFET

Liang Chun Yu; Kin P. Cheung; Vinayak Tilak; Greg Dunne; Kevin Matocha; Jason P. Campbell; John S. Suehle; Kuang Sheng

doi:10.4028/www.scientific.net/MSF.645-648.979

Paper Titles

Design and Gate Drive Considerations for Epitaxial 1.2 kV Buried Grid N-on and N-off JFETs for Operation at 250°C
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Circuit Modeling of Vertical Buried-Grid SiC JFETs
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Performance, Reliability, and Robustness of 4H-SiC Power DMOSFETs
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Effect of Band-Edge Interface Traps and Transition Region Mobility on Transport in 4H-SiC MOSFETs
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Wafer-Level Hall Measurement on SiC MOSFET
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Effect of ON-State Stress on SiC DMOSFET Subthreshold I-V Characteristics
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1360 V, 5.0 mΩcm² Double-Implanted MOSFETs Fabricated on 4H-SiC(000-1)
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Improved Characteristics of 4H-SiC MISFET with AlON/Nitrided SiO₂ Stacked Gate Dielectrics
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Effect of Doping Concentration in Buried-Channel NMOSFETs on Electrical Properties of 4H-SiC CMOS Devices
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HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Wafer-Level Hall Measurement on SiC MOSFET

Wafer-Level Hall Measurement on SiC MOSFET

Abstract:

Low channel mobility is one of the biggest challenges to commercializing SiC MOSFETs. Accurate mobility measurement is essential for understanding the mechanisms that lead to low mobility. The most widely used effective mobility measurements overestimate the inversion charge for devices that have high level of defects. Mobility measured by the Hall effect is more accurate; however the conventional Hall mobility measurement is tedious. In this work, we demonstrate a wafer-level Hall measurement technique, which is simple and convenient to implement. With this method, extensive study of the mobility degradation is possible.

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Materials Science Forum (Volumes 645-648)

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979-982

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.979

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Online since:

April 2010

Authors:

Liang Chun Yu, Kin P. Cheung, Vinayak Tilak, Greg Dunne, Kevin Matocha, Jason P. Campbell, John S. Suehle, Kuang Sheng

Keywords:

Channel Mobility, Hall Mobility, MOSFET

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