Wafer-Level Hall Measurement on SiC MOSFET

Abstract:

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Low channel mobility is one of the biggest challenges to commercializing SiC MOSFETs. Accurate mobility measurement is essential for understanding the mechanisms that lead to low mobility. The most widely used effective mobility measurements overestimate the inversion charge for devices that have high level of defects. Mobility measured by the Hall effect is more accurate; however the conventional Hall mobility measurement is tedious. In this work, we demonstrate a wafer-level Hall measurement technique, which is simple and convenient to implement. With this method, extensive study of the mobility degradation is possible.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

979-982

DOI:

10.4028/www.scientific.net/MSF.645-648.979

Citation:

L. C. Yu et al., "Wafer-Level Hall Measurement on SiC MOSFET", Materials Science Forum, Vols. 645-648, pp. 979-982, 2010

Online since:

April 2010

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Price:

$35.00

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