1360 V, 5.0 mΩcm2 Double-Implanted MOSFETs Fabricated on 4H-SiC(000-1)

Hiroshi Kono; Takuma Suzuki; Makoto Mizukami; Chiharu Ota; Shinsuke Harada; Junji Senzaki; Kenji Fukuda; Takashi Shinohe

doi:10.4028/www.scientific.net/MSF.645-648.987

Paper Titles

Performance, Reliability, and Robustness of 4H-SiC Power DMOSFETs
p.969

Effect of Band-Edge Interface Traps and Transition Region Mobility on Transport in 4H-SiC MOSFETs
p.975

Wafer-Level Hall Measurement on SiC MOSFET
p.979

Effect of ON-State Stress on SiC DMOSFET Subthreshold I-V Characteristics
p.983

1360 V, 5.0 mΩcm² Double-Implanted MOSFETs Fabricated on 4H-SiC(000-1)
p.987

Improved Characteristics of 4H-SiC MISFET with AlON/Nitrided SiO₂ Stacked Gate Dielectrics
p.991

Effect of Doping Concentration in Buried-Channel NMOSFETs on Electrical Properties of 4H-SiC CMOS Devices
p.995

Isotropic Channel Mobility in UMOSFETs on 4H-SiC C-Face with Vicinal Off-Angle
p.999

Comparison of Inversion Layer Electron Transport of Lightly Doped 4H and 6H SiC MOSFETs
p.1005

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1360 V, 5.0 mΩcm² Double-Implanted MOSFETs Fabricated on 4H-SiC(000-1)

Abstract:

Silicon carbide Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistors (DIMOSFETs) were fabricated on 4H-SiC (000-1) carbon face. The DIMOSFETs were characterized from room temperature to 250°C. At room temperature, they showed a specific on-resistance of 4.9 mΩcm2 at a gate bias of 20 V and a drain voltage of 1.0 V. The specific on-resistance taken at a drain current (Id) of 260 A/cm2 was 5.0 mΩcm2. The blocking voltage of this device was higher than 1360 V at room temperature. At 250°C, the specific on-resistance increased from 5.0 mΩcm2 to 12.5 mΩcm2 and the threshold voltage determined at Id = 26 mA/cm2 decreased from 5.5 V to 4.3 V.