1360 V, 5.0 mΩcm2 Double-Implanted MOSFETs Fabricated on 4H-SiC(000-1)

Abstract:

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Silicon carbide Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistors (DIMOSFETs) were fabricated on 4H-SiC (000-1) carbon face. The DIMOSFETs were characterized from room temperature to 250°C. At room temperature, they showed a specific on-resistance of 4.9 mΩcm2 at a gate bias of 20 V and a drain voltage of 1.0 V. The specific on-resistance taken at a drain current (Id) of 260 A/cm2 was 5.0 mΩcm2. The blocking voltage of this device was higher than 1360 V at room temperature. At 250°C, the specific on-resistance increased from 5.0 mΩcm2 to 12.5 mΩcm2 and the threshold voltage determined at Id = 26 mA/cm2 decreased from 5.5 V to 4.3 V.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

987-990

DOI:

10.4028/www.scientific.net/MSF.645-648.987

Citation:

H. Kono et al., "1360 V, 5.0 mΩcm2 Double-Implanted MOSFETs Fabricated on 4H-SiC(000-1) ", Materials Science Forum, Vols. 645-648, pp. 987-990, 2010

Online since:

April 2010

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