Effect of Doping Concentration in Buried-Channel NMOSFETs on Electrical Properties of 4H-SiC CMOS Devices

Mitsuo Okamoto; Miwako Iijima; Tsutomu Yatsuo; Kenji Fukuda; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.645-648.995

Paper Titles

Wafer-Level Hall Measurement on SiC MOSFET
p.979

Effect of ON-State Stress on SiC DMOSFET Subthreshold I-V Characteristics
p.983

1360 V, 5.0 mΩcm² Double-Implanted MOSFETs Fabricated on 4H-SiC(000-1)
p.987

Improved Characteristics of 4H-SiC MISFET with AlON/Nitrided SiO₂ Stacked Gate Dielectrics
p.991

Effect of Doping Concentration in Buried-Channel NMOSFETs on Electrical Properties of 4H-SiC CMOS Devices
p.995

Isotropic Channel Mobility in UMOSFETs on 4H-SiC C-Face with Vicinal Off-Angle
p.999

Comparison of Inversion Layer Electron Transport of Lightly Doped 4H and 6H SiC MOSFETs
p.1005

Electrical Characteristics of MOSFETs Using 3C-SiC with Buried Insulating Layer
p.1009

Current Transient Effect in N-Channel 6H-SiC MOSFET Induced by Heavy Ion Irradiation
p.1013

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Effect of Doping Concentration in Buried-Channel NMOSFETs on Electrical Properties of 4H-SiC CMOS Devices

Abstract:

We fabricated 4H-silicon carbide (SiC) Complementary Metal-Oxide-Semiconductor (CMOS) devices with wet gate oxidation processing. The channel properties of n-channel MOS Field-Effect-Transistor (NMOS) were controlled by buried channel (BC) structure. The electrical properties of CMOS devices depended on the doping concentration of the BC-layer (Nbc) for NMOS. The SiC CMOS inverters with high Nbc indicated fast operation at the delay time (Td) of 4.8 ns for supply voltage of 15 V. To our knowledge, Td obtained in this study is the smallest among the reported values for SiC CMOS inverters.