Effect of Doping Concentration in Buried-Channel NMOSFETs on Electrical Properties of 4H-SiC CMOS Devices

Abstract:

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We fabricated 4H-silicon carbide (SiC) Complementary Metal-Oxide-Semiconductor (CMOS) devices with wet gate oxidation processing. The channel properties of n-channel MOS Field-Effect-Transistor (NMOS) were controlled by buried channel (BC) structure. The electrical properties of CMOS devices depended on the doping concentration of the BC-layer (Nbc) for NMOS. The SiC CMOS inverters with high Nbc indicated fast operation at the delay time (Td) of 4.8 ns for supply voltage of 15 V. To our knowledge, Td obtained in this study is the smallest among the reported values for SiC CMOS inverters.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

995-998

DOI:

10.4028/www.scientific.net/MSF.645-648.995

Citation:

M. Okamoto et al., "Effect of Doping Concentration in Buried-Channel NMOSFETs on Electrical Properties of 4H-SiC CMOS Devices ", Materials Science Forum, Vols. 645-648, pp. 995-998, 2010

Online since:

April 2010

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Price:

$35.00

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