Isotropic Channel Mobility in UMOSFETs on 4H-SiC C-Face with Vicinal Off-Angle

Shinsuke Harada; Sachiko Ito; Makoto Kato; Akio Takatsuka; Kazutoshi Kojima; Kenji Fukuda; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.645-648.999

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HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Isotropic Channel Mobility in UMOSFETs on 4H-SiC...

Isotropic Channel Mobility in UMOSFETs on 4H-SiC C-Face with Vicinal Off-Angle

Abstract:

UMOSFET is theoretically suitable to decrease the on-resistance of the MOSFET. In this study, in order to determine the cell structure of the SiC UMOSFET with extremely low on-resistance, influences of the orientation of the trench and the off-angle of the wafer on the MOS properties are investigated. The channel resistance, gate I-V curves and instability of threshold voltage are superior on the {11-20} planes as compared with other planes. On the vicinal off wafer, influence of the off-angle disappears and the properties on the equivalent planes are almost the same. The obtained results indicate that the extremely low on-resistance with the high stability and high reliability is possible in the SiC UMOSFET by the hexagonal cell composed of the six {11-20} planes on the vicinal off wafer, and actually an extremely low channel resistance was demonstrated on the hexagonal UMOSFET with the six {11-20} planes on the vicinal off wafer.

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Materials Science Forum (Volumes 645-648)

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999-1004

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.999

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Online since:

April 2010

Authors:

Shinsuke Harada, Sachiko Ito, Makoto Kato, Akio Takatsuka, Kazutoshi Kojima, Kenji Fukuda, Hajime Okumura

Keywords:

Carbon Face, Channel Mobility, MOSFET

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