Effect of ON-State Stress on SiC DMOSFET Subthreshold I-V Characteristics

Abstract:

Article Preview

We have observed a noticeable increase in the instability of the I-V characteristics following an ON-state current stress, especially in the subthreshold region. An increased stretch-out and negative shift can give rise to increased leakage current in the OFF-state if proper precautions are not met to provide a proper margin for the threshold voltage. State-of-the-art 50-A MOSFETs exhibit less instability than previous 20-A devices, and devices that run hotter show a larger degradation.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

983-986

DOI:

10.4028/www.scientific.net/MSF.645-648.983

Citation:

A. J. Lelis et al., "Effect of ON-State Stress on SiC DMOSFET Subthreshold I-V Characteristics ", Materials Science Forum, Vols. 645-648, pp. 983-986, 2010

Online since:

April 2010

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.