Radiation Hardness Evaluation of SiC-BGSIT

Abstract:

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In this study, we evaluated the radiation hardness of SiC Buried Gate Static Induction Transistors (SiC-BGSITs) and Si-based switching devices up to the absorbed dose of 10 MGy(SiO2). The on-voltage Von of Si-IGBT degraded excessively at the early stage of the irradiation (>~0.1 MGy(SiO2)) due to the bulk damage produced by Compton electrons like the gain degradation in Si bipolar transistors. The threshold voltage Vth of Si-MOSFET was very sensitive against the radiation due to the competing mechanism between the generation of the hole traps in the gate SiO2 and the SiO2/Si interface states. Moreover, the breakdown voltage VBR and leak current Ileak of MOSFET degraded significantly against the absorbed dose. While, the electrical properties of SiC-BGSIT was very stable even after the irradiation of 10 MGy(SiO2).

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

941-944

DOI:

10.4028/www.scientific.net/MSF.645-648.941

Citation:

Y. Tanaka et al., "Radiation Hardness Evaluation of SiC-BGSIT", Materials Science Forum, Vols. 645-648, pp. 941-944, 2010

Online since:

April 2010

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Price:

$35.00

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