Radiation Hardness Evaluation of SiC-BGSIT

Yasunori Tanaka; Shinobu Onoda; Akio Takatsuka; Takeshi Ohshima; Tsutomu Yatsuo

doi:10.4028/www.scientific.net/MSF.645-648.941

Paper Titles

4H-SiC PiN Diodes Fabricated Using Low-Temperature Halo-Carbon Epitaxial Growth Method
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Feasibility of Efficient Power Switching Using Short-Channel 1200-V Normally-Off SiC VJFETs; Experimental Analysis and Simulations
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Fast Switching with SiC VJFETs - Influence of the Device Topology
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Performance of 15 mm² 1200 V Normally-Off SiC VJFETs with 120 A Saturation Current
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Radiation Hardness Evaluation of SiC-BGSIT
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Physics of Hysteresis in MESFET Drain I-V Characteristics: Simulation Approach
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Characterization of SiC JFETs and its Application in Extreme Temperature (over 450°C) Circuit Design
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Amplitude Shift Keyed Radio Communications for Hostile Environments
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Minimization of Drain-to-Gate Interaction in a SiC JFET Inverter Using an External Gate-Source Capacitor
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HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Radiation Hardness Evaluation of SiC-BGSIT

Radiation Hardness Evaluation of SiC-BGSIT

Abstract:

In this study, we evaluated the radiation hardness of SiC Buried Gate Static Induction Transistors (SiC-BGSITs) and Si-based switching devices up to the absorbed dose of 10 MGy(SiO2). The on-voltage Von of Si-IGBT degraded excessively at the early stage of the irradiation (>~0.1 MGy(SiO2)) due to the bulk damage produced by Compton electrons like the gain degradation in Si bipolar transistors. The threshold voltage Vth of Si-MOSFET was very sensitive against the radiation due to the competing mechanism between the generation of the hole traps in the gate SiO2 and the SiO2/Si interface states. Moreover, the breakdown voltage VBR and leak current Ileak of MOSFET degraded significantly against the absorbed dose. While, the electrical properties of SiC-BGSIT was very stable even after the irradiation of 10 MGy(SiO2).