Synthetic Properties of the c-Axis Tilted AlN Thin Films

Abstract:

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Aluminum nitride (AlN) is one of the most popular piezoelectric materials for high frequency resonators, filters and sensors. The piezoelectric property, i.e. electromechanical coupling coefficient, of AlN thin film is highly related to its crystalline orientation. AlN thin films with various c-axis-tilted angles can be fabricated by the RF sputtering technique. The crystallization and grain growth orientations of AlN thin film are examined by XRD, SEM, and TEM, while the bonding condition and nano-mechanical properties are investigated by a raman system and a nano-indentation technique.

Info:

Periodical:

Materials Science Forum (Volumes 654-656)

Main Theme:

Edited by:

Jian-Feng Nie and Allan Morton

Pages:

1780-1783

DOI:

10.4028/www.scientific.net/MSF.654-656.1780

Citation:

C. J. Chung et al., "Synthetic Properties of the c-Axis Tilted AlN Thin Films", Materials Science Forum, Vols. 654-656, pp. 1780-1783, 2010

Online since:

June 2010

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Price:

$35.00

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