Effect of Ultra-Thin Pt Layer on the Preferred Orientation of AlN Films

Takashi Harumoto; Shinji Muraishi; Ji Shi; Yoshio Nakamura

doi:10.4028/www.scientific.net/MSF.654-656.1776

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HomeMaterials Science ForumMaterials Science Forum Vols. 654-656Effect of Ultra-Thin Pt Layer on the Preferred...

Effect of Ultra-Thin Pt Layer on the Preferred Orientation of AlN Films

Abstract:

Preferred orientation of AlN film has been changed from random to c-axis textured by inserting the ultra-thin Pt/AlN underlayer. The ultra-thin Pt underlayer also exhibits the same effect on the preferred orientation control of AlN film. According to intensity distributions of diffracted X-ray collected as the function of 2θ and ψ on these films, it is clearly shown that c-axis of AlN is altered from titled to the surface normal. AlN film and AlN films with underlayers demonstrate tensile stress, and it can be reduced by inserting underlayers. The effects of underlayers on the development of the preferred orientation and the reduction of stresses are similar to that of decreasing sputtering gas pressure.

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Periodical:

Materials Science Forum (Volumes 654-656)

Pages:

1776-1779

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.654-656.1776

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Online since:

June 2010

Authors:

Takashi Harumoto, Shinji Muraishi, Ji Shi, Yoshio Nakamura

Keywords:

Aluminum Nitride (AlN), BAW, Preferred Orientation, Reactive Sputtering, Residual Stress, Sin2psi Method

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