Growth and Characterization of Ge1-xSnx Layers for High Mobility Tensile-Strained Ge Channels of CMOS Devices

Osamu Nakatsuka; Yosuke Shimura; Shotaro Takeuchi; Noramasa Tsutsui; Shigeaki Zaima

doi:10.4028/www.scientific.net/MSF.654-656.1788

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HomeMaterials Science ForumMaterials Science Forum Vols. 654-656Growth and Characterization of Ge1-xSnx Layers for...

Growth and Characterization of Ge_1-xSn_x Layers for High Mobility Tensile-Strained Ge Channels of CMOS Devices

Abstract:

We have investigated the growth and characteristics of heteroepitaxial Ge1-xSnx layers on various substrates. The low temperature growth and the large misfit strain between Ge1-xSnx and Si leads to the high density of defects such as vacancy in Ge1-xSnx layers. They effectively enhance the propagation of misfit dislocations and the strain relaxation with suppressing the precipitation of Sn atoms from Ge1-xSnx layers. We succeeded in growing strain-relaxed Ge1-xSnx layers with a Sn content over 9% by controlling the dislocation structure on Si substrates. We also characterized the Hall mobility of Ge1-xSnx layers and found that the incorporation of Sn into Ge effectively reduced the concentration of holes related with vacancy defects, and improved on the hole mobility.

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Materials Science Forum (Volumes 654-656)

Pages:

1788-1791

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.654-656.1788

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Online since:

June 2010

Authors:

Osamu Nakatsuka, Yosuke Shimura, Shotaro Takeuchi, Noramasa Tsutsui, Shigeaki Zaima

Keywords:

Crystal Growth, Dislocation, Germanium, Hall Mobility, Strain, TiN

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