Growth and Characterization of Ge1-xSnx Layers for High Mobility Tensile-Strained Ge Channels of CMOS Devices

Abstract:

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We have investigated the growth and characteristics of heteroepitaxial Ge1-xSnx layers on various substrates. The low temperature growth and the large misfit strain between Ge1-xSnx and Si leads to the high density of defects such as vacancy in Ge1-xSnx layers. They effectively enhance the propagation of misfit dislocations and the strain relaxation with suppressing the precipitation of Sn atoms from Ge1-xSnx layers. We succeeded in growing strain-relaxed Ge1-xSnx layers with a Sn content over 9% by controlling the dislocation structure on Si substrates. We also characterized the Hall mobility of Ge1-xSnx layers and found that the incorporation of Sn into Ge effectively reduced the concentration of holes related with vacancy defects, and improved on the hole mobility.

Info:

Periodical:

Materials Science Forum (Volumes 654-656)

Main Theme:

Edited by:

Jian-Feng Nie and Allan Morton

Pages:

1788-1791

DOI:

10.4028/www.scientific.net/MSF.654-656.1788

Citation:

O. Nakatsuka et al., "Growth and Characterization of Ge1-xSnx Layers for High Mobility Tensile-Strained Ge Channels of CMOS Devices", Materials Science Forum, Vols. 654-656, pp. 1788-1791, 2010

Online since:

June 2010

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$35.00

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