The Optimization of SMR-Based Filter by Thermal Annealing Treatment

Ching Liang Wei; Ying Chung Chen; Chien Chuan Cheng; Kuo Sheng Kao; Chung Jen Chung; Wei Tsai Chang

doi:10.4028/www.scientific.net/MSF.654-656.1792

Paper Titles

Effect of Ultra-Thin Pt Layer on the Preferred Orientation of AlN Films
p.1776

Synthetic Properties of the c-Axis Tilted AlN Thin Films
p.1780

Enhancement of Photocatalytic Reaction of Titanium Dioxide Film by Surface Texturing
p.1784

Growth and Characterization of Ge_1-xSn_x Layers for High Mobility Tensile-Strained Ge Channels of CMOS Devices
p.1788

The Optimization of SMR-Based Filter by Thermal Annealing Treatment
p.1792

Effect of Interlayer Thickness on Stress and Dielectric Properties of MgTiO3 Modified (Ba,Sr)TiO₃ Multilayer Thin Films
p.1796

Direct Measurement for Electric Resistance of Ferromagnetic Metal- Nano-Contact in Oxide Layer
p.1800

Surface Treatment of 316L Stainless Steel by High Current Pulsed Electron Beam
p.1803

Numerical Simulation for Surface Modification of Thermal Barrier Coatings by High-Current Pulse Electron Beam
p.1807

HomeMaterials Science ForumMaterials Science Forum Vols. 654-656The Optimization of SMR-Based Filter by Thermal...

The Optimization of SMR-Based Filter by Thermal Annealing Treatment

Abstract:

In this study, an SMR-based filter was fabricated by dc/rf magnetron sputtering and photolithography, and a thermal annealing treatment was adopted to improve the frequency response. The SMR-based filter is composed of a ZnO piezoelectric thin film onto SiO2/W Bragg reflector. ZnO thin films were prepared by two-step sputtering with various deposition temperatures to obtain good piezoelectric properties. ZnO layers deposited at the temperature of 200 °C exhibit a highly c-axis preferred orientation, good crystalline characteristics and low surface roughness. The filter is thermal treated by a rapid thermal annealing (RTA) technique. The thermal annealing treatment has improved the film properties of ZnO layers, resulting in a higher c-axis preferred orientation and a lower surface roughness of ZnO films than those of as-deposited ZnO films. The atomic ratio of Zn to O in ZnO film approaches one at the annealing temperature of 400 °C, which results in a comparatively oxidized stoichiometric ZnO film. Finally, the frequency response of the annealed filter is improved, and a lower insertion loss is obtained.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 654-656)

Pages:

1792-1795

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.654-656.1792

Citation:

Cite this paper

Online since:

June 2010

Authors:

Ching Liang Wei, Ying Chung Chen, Chien Chuan Cheng, Kuo Sheng Kao, Chung Jen Chung, Wei Tsai Chang

Keywords:

Filter, Solidly Mounted Resonator, Spherically Mounted Retro-Reflector (SMR), Thermal Annealing

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] R.C. Ruby, P. Bradley, Y. Oshmyansky and A. Chien: IEEE Ultrason. Symp. Vol. 1 (2001), p.812.

Google Scholar

[2] J.D. Larson, R.C. Ruby, P.D. Bradley, J. Wen, S.L. Kok and A. Chien: IEEE Ultrason. Symp. Vol. 1 (2000), p.869.

Google Scholar

[3] K.M. Lakin, K.T. McCarron, J. Belsick and R. Rose: IEEE Ultrason. Symp. Vol. 1 (2000), p.1.

Google Scholar

[4] K.M. Lakin and J.S. Wang: Appl. Phys. Lett. Vol. 38 (1981), p.125.

Google Scholar

[5] T. Nishihara, T. Yokoyama, T. Miyashita and Y. Satoh: IEEE Ultrason. Symp., Vol. 1 (2002) p.969.

Google Scholar

[6] R. C Lin, Y.C. Chen, W.T. Chang, C.C. Cheng and K.S. Kao: Sens. Actuators. A Phys.: Vol. 147 (2008), p.425.

Google Scholar

[7] W.E. Newell: Proc. IEEE Vol. 53 (1965), p.575.

Google Scholar

[8] R. Lanz and P. Muralt: IEEE Trans. on Ultrason., Ferroelect., and Freq. Contr. Vol. 52 (2005), p.936.

DOI: 10.1109/tuffc.2005.1504014

Google Scholar

[9] C.J. Chung, Y.C. Chen, C.C. Cheng, C.L. Wei and K.S. Kao: IEEE Trans. on Ultrason., Ferroelect., and Freq. Contr. Vol. 54 (2007), p.802.

Google Scholar

[10] L. Jing, Z. Xu, J. Shang, X. Sun, W. Cai and H. Guo: Mater. Sci. Eng. A Vol. 332 (2002), p.356.

Google Scholar