Oxidation Process by RTP for 4H-SiC MOSFET Gate Fabrication

Aurore Constant; Nicolas Camara; Josep Montserrat; Esther Pausas; Jean Camassel; Philippe Godignon

doi:10.4028/www.scientific.net/MSF.679-680.500

Paper Titles

Control of Inclined Sidewall Angles of 4H-SiC Mesa and Trench Structures
p.485

TEM Observation of 8 Deg Off-Axis 4H-SiC (0001) Surfaces Planarized by Catalyst-Referred Etching
p.489

Abrasive-Free Planarization of 3-Inch 4H-SiC Substrate Using Catalyst-Referred Etching
p.493

Reduction of Charge Trapping Sites in Al₂O₃/SiO₂ Stacked Gate Dielectrics by Incorporating Nitrogen for Highly Reliable 4H-SiC MIS Devices
p.496

Oxidation Process by RTP for 4H-SiC MOSFET Gate Fabrication
p.500

Carbon-Cap for Ohmic Contacts on n-Type Ion Implanted 4H-SiC
p.504

β-SiC NWs Grown on Patterned and MEMS Silicon Substrates
p.508

Growth of SiC Microwires through Si Microwires Carburization
p.512

Time-Dependent Density Functional Calculations on Hydrogenated Silicon Carbide Nanocrystals
p.516

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Oxidation Process by RTP for 4H-SiC MOSFET Gate...

Oxidation Process by RTP for 4H-SiC MOSFET Gate Fabrication

Abstract:

Rapid Thermal Processing (RTP) has been evaluated as an alternative to the conventional furnace process for the gate oxide formation of SiC lateral MOSFETs. We show that this innovative oxidation method has not only the advantage to significantly reduce the thermal budget compared to classical oxidation, but also produces a significant improvement of MOSFET performance when using N2O as oxidizing gas. Studying different surface preparation before gate oxidation, we demonstrate that in-situ surface preparation by H2 annealing increases considerably the channel mobility and also the electrical stability with respect to constant bias stress at low-field.

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Materials Science Forum (Volumes 679-680)

Pages:

500-503

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.500

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Online since:

March 2011

Authors:

Aurore Constant, Nicolas Camara, Josep Montserrat, Esther Pausas, Jean Camassel, Philippe Godignon

Keywords:

H₂ Surface Pre-Treatment, MOSFET, N₂O, Nitridation, Oxidation, RTP

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