Oxidation Process by RTP for 4H-SiC MOSFET Gate Fabrication

Abstract:

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Rapid Thermal Processing (RTP) has been evaluated as an alternative to the conventional furnace process for the gate oxide formation of SiC lateral MOSFETs. We show that this innovative oxidation method has not only the advantage to significantly reduce the thermal budget compared to classical oxidation, but also produces a significant improvement of MOSFET performance when using N2O as oxidizing gas. Studying different surface preparation before gate oxidation, we demonstrate that in-situ surface preparation by H2 annealing increases considerably the channel mobility and also the electrical stability with respect to constant bias stress at low-field.

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Edited by:

Edouard V. Monakhov, Tamás Hornos and Bengt. G. Svensson

Pages:

500-503

DOI:

10.4028/www.scientific.net/MSF.679-680.500

Citation:

A. Constant et al., "Oxidation Process by RTP for 4H-SiC MOSFET Gate Fabrication", Materials Science Forum, Vols. 679-680, pp. 500-503, 2011

Online since:

March 2011

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Price:

$35.00

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