Minority Carrier Transient Spectroscopy of As-Grown, Electron Irradiated and Thermally Oxidized p-Type 4H-SiC

Giovanni Alfieri; Tsunenobu Kimoto

doi:10.4028/www.scientific.net/MSF.778-780.269

Paper Titles

Formation of an Interfacial Buffer Layer for 3C-SiC Heteroepitaxy on AlN/Si Substrates
p.251

Curvature Evaluation of Si/3C-SiC/Si Hetero-Structure Grown by Chemical Vapor Deposition
p.255

Characterization of Ge-Doped Homoepitaxial Layers Grown by Chemical Vapor Deposition
p.261

Persistent Conductivity in n-Type 3C-SiC Observed at Low Temperatures
p.265

Minority Carrier Transient Spectroscopy of As-Grown, Electron Irradiated and Thermally Oxidized p-Type 4H-SiC
p.269

Annealing of Electron Irradiated, Thick, Ultrapure 4H SiC between 1100°C and 1500°C and Measurements of Lifetime and Photoluminescence
p.273

Identification of Structures of the Deep Levels in 4H-SiC
p.277

Oxidation Induced ON₁, ON_2a/b Defects in 4H-SiC Characterized by DLTS
p.281

Identification of the Negative Carbon Vacancy at Quasi-Cubic Site in 4H-SiC by EPR and Theoretical Calculations
p.285

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Minority Carrier Transient Spectroscopy of As-Grown, Electron Irradiated and Thermally Oxidized p-Type 4H-SiC

Abstract:

A total of nine electrically active levels have been detected in as-grown and electron irradiated p-type 4H-SiC epilayers. These traps are found in the 0.32-2.26 eV energy range, above the valence band edge (E_V). Of these, six are majority carrier traps whereas three are minority carrier traps. We found that thermal oxidation affects the concentrations of two midgap levels, the majority carrier trap, labeled HK4 and the minority carrier trap identified as EH_6/7. The analysis of the irradiation energy and dose dependence of the concentration of these two traps, rules out the possibility that they may share the same origin.