Identification of Structures of the Deep Levels in 4H-SiC

Hiroki Nakane; Masashi Kato; Masaya Ichimura; Takeshi Ohshima

doi:10.4028/www.scientific.net/MSF.778-780.277

Paper Titles

Characterization of Ge-Doped Homoepitaxial Layers Grown by Chemical Vapor Deposition
p.261

Persistent Conductivity in n-Type 3C-SiC Observed at Low Temperatures
p.265

Minority Carrier Transient Spectroscopy of As-Grown, Electron Irradiated and Thermally Oxidized p-Type 4H-SiC
p.269

Annealing of Electron Irradiated, Thick, Ultrapure 4H SiC between 1100°C and 1500°C and Measurements of Lifetime and Photoluminescence
p.273

Identification of Structures of the Deep Levels in 4H-SiC
p.277

Oxidation Induced ON₁, ON_2a/b Defects in 4H-SiC Characterized by DLTS
p.281

Identification of the Negative Carbon Vacancy at Quasi-Cubic Site in 4H-SiC by EPR and Theoretical Calculations
p.285

Defect Levels in High Purity Semi-Insulating 4H-SiC Studied by Alpha Particle Induced Charge Transient Spectroscopy
p.289

Correlation between Microwave Reflectivity and Excess Carrier Concentrations in 4H-SiC
p.293

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Identification of Structures of the Deep Levels in...

Identification of Structures of the Deep Levels in 4H-SiC

Abstract:

We investigated annealing behavior of the carrier lifetime and the deep levels in electron irradiated n-type and semi-insulating 4H-SiCs. We observed two peaks for each sample by photo induced current transient spectroscopy (PICTS) measurements, and their heights depended on annealing temperature. By comparing the annealing behavior of the peak height with reported temperature dependence of concentrations of various defects, we speculated that the observed peaks originate from either V_SiV_C, C_SiV_C or EI4.

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Silicon Carbide and Related Materials 2013

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Materials Science Forum (Volumes 778-780)

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277-280

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.277

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Online since:

February 2014

Authors:

Hiroki Nakane*, Masashi Kato, Masaya Ichimura, Takeshi Ohshima

Keywords:

4H-SiC, Carrier Lifetime, Deep Level, Electron Irradiation

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References

[1] J. Zhang, L. Storasta, J. P. Bergman, N. T. Son, and E. Janzén, J. Appl. Phys. Vol. 93, (2003), p.4708.

Google Scholar

[2] K. Kawahara, M. Krieger, J. Suda and T. Kimoto, J. Appl. Phys. Vol. 108, (2010), p.023706.

Google Scholar

[3] P. Carlson, N. T. Son, A. Gali, J. Isoya, N. Morishita, T. Ohshima, B. Magnusson and E. Janzén, Phys. Rev. Vol. 82, (2010), p.235203.

Google Scholar

[4] T. Umeda, N. T. Son, J. Isoya, E. Janze ´n, T. Ohshima, N. Morishita, H. Itoh, A. Gali and M. Bockstedte, Phys. Rev. Vol. 96, (2006), p.145501.

DOI: 10.1103/physrevlett.96.055501

Google Scholar

[5] G. Alfieri, E. V. Monakhov, B. G. Svensson and M. K. Linnarsson, J. Appl. Phys. Vol. 98, (2005), p.043518.

Google Scholar

[6] L. Storasta, J. P. Bergman, E. Janzén, A. Henry and J. Lu, J. Appl. Phys. Vol. 96, (2004), p.4909.

Google Scholar

[7] T. Dalibor, G. Pensl, H. Matsunami, T. Kimoto, W. J. Choyke, A. Schöner, and N. Nordell, Phys Stat Sol (a), Vol. 162, (1997), p.199.

DOI: 10.1002/1521-396x(199707)162:1<199::aid-pssa199>3.0.co;2-0

Google Scholar

[8] K. Danno and T. Kimoto, J. Appl. Phys. Vol. 101, (2007), p.103704.

Google Scholar

[9] M. Kato, S. Tanaka, M. Ichimura, E. Arai, S. Nakamura, T. Kimoto and R. Pässler, J. Appl. Phys. Vol. 100 , (2006), p.053708.

DOI: 10.1063/1.2344809

Google Scholar