Defect Levels in High Purity Semi-Insulating 4H-SiC Studied by Alpha Particle Induced Charge Transient Spectroscopy

Naoya Iwamoto; Shinobu Onoda; Natsuko Fujita; Takahiro Makino; Takeshi Ohshima

doi:10.4028/www.scientific.net/MSF.778-780.289

Paper Titles

Annealing of Electron Irradiated, Thick, Ultrapure 4H SiC between 1100°C and 1500°C and Measurements of Lifetime and Photoluminescence
p.273

Identification of Structures of the Deep Levels in 4H-SiC
p.277

Oxidation Induced ON₁, ON_2a/b Defects in 4H-SiC Characterized by DLTS
p.281

Identification of the Negative Carbon Vacancy at Quasi-Cubic Site in 4H-SiC by EPR and Theoretical Calculations
p.285

Defect Levels in High Purity Semi-Insulating 4H-SiC Studied by Alpha Particle Induced Charge Transient Spectroscopy
p.289

Correlation between Microwave Reflectivity and Excess Carrier Concentrations in 4H-SiC
p.293

Diffusion of Alkali Metals in SiC
p.297

Comparison of Carrier Lifetime Measurements and Mapping in 4H SiC Using Time Resolved Photoluminscence and μ-PCD
p.301

On Photoelectrical Properties of 6H-SiC Bulk Crystals PVT-Grown on 6H- and 4H-SiC Substrates
p.305

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Defect Levels in High Purity Semi-Insulating...

Defect Levels in High Purity Semi-Insulating 4H-SiC Studied by Alpha Particle Induced Charge Transient Spectroscopy

Abstract:

Defect levels in high purity semi-insulating 4H silicon carbide substrates are studied by charge transient spectroscopy using 5.5 MeV alpha particles. A shallow defect level with the activation energy around 0.3 eV is found in all samples annealed at temperatures from 1400 to 1600 °C. Some other defect levels lying at deeper in the bandgap are found in samples annealed at 1400 and 1500 °C. As these deep levels are annealed out by 1600 °C, the series resistance of samples is decreased.

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Materials Science Forum (Volumes 778-780)

Pages:

289-292

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.289

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Online since:

February 2014

Authors:

Naoya Iwamoto*, Shinobu Onoda, Natsuko Fujita, Takahiro Makino, Takeshi Ohshima

Keywords:

Alpha Particle, Charge Transient Spectroscopy, Defect Level, High Purity Semi-Insulating (HPSI)

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