Oxidation Induced ON1, ON2a/b Defects in 4H-SiC Characterized by DLTS

Ian D. Booker; Hassan Abdalla; Louise Lilja; Jawad Hassan; Peder Bergman; E.Ö. Sveinbjörnsson; Erik Janzén

doi:10.4028/www.scientific.net/MSF.778-780.281

Paper Titles

Persistent Conductivity in n-Type 3C-SiC Observed at Low Temperatures
p.265

Minority Carrier Transient Spectroscopy of As-Grown, Electron Irradiated and Thermally Oxidized p-Type 4H-SiC
p.269

Annealing of Electron Irradiated, Thick, Ultrapure 4H SiC between 1100°C and 1500°C and Measurements of Lifetime and Photoluminescence
p.273

Identification of Structures of the Deep Levels in 4H-SiC
p.277

Oxidation Induced ON₁, ON_2a/b Defects in 4H-SiC Characterized by DLTS
p.281

Identification of the Negative Carbon Vacancy at Quasi-Cubic Site in 4H-SiC by EPR and Theoretical Calculations
p.285

Defect Levels in High Purity Semi-Insulating 4H-SiC Studied by Alpha Particle Induced Charge Transient Spectroscopy
p.289

Correlation between Microwave Reflectivity and Excess Carrier Concentrations in 4H-SiC
p.293

Diffusion of Alkali Metals in SiC
p.297

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Oxidation Induced ON1, ON2a/b Defects in 4H-SiC...

Oxidation Induced ON₁, ON_2a/b Defects in 4H-SiC Characterized by DLTS

Abstract:

The deep levels ON₁ and ON_2a/b introduced by oxidation into 4H-SiC are characterized via standard DLTS and via filling pulse dependent DLTS measurements. Separation of the closely spaced ON_2a/b defect is achieved by using a higher resolution correlation function (Gaver-Stehfest 4) and apparent energy level, apparent electron capture cross section and filling pulse measurement derived capture cross sections are given.

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Silicon Carbide and Related Materials 2013

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Materials Science Forum (Volumes 778-780)

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281-284

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.281

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Online since:

February 2014

Authors:

Ian D. Booker, Hassan Abdalla, Louise Lilja, Jawad Hassan, Peder Bergman, E.Ö. Sveinbjörnsson, Erik Janzén

Keywords:

4H-SiC, Capture Cross Section, Carrier Lifetime, Deep Level, Defect, DLTS, Oxidation, Trap

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References

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